Defect detection system for extreme ultraviolet lithography mask

A technology for extreme ultraviolet lithography and defect detection, applied in the field of extreme ultraviolet lithography mask defect detection system, to achieve the effects of small size, easy processing, and reduced processing costs
CN103424985AInactive Publication Date: 2013-12-04INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
Publication Date
2013-12-04
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a defect detection system for an extreme ultraviolet lithography mask. The defect detection system for the extreme ultraviolet lithography mask comprises an extreme ultraviolet light source, an extreme ultraviolet light transmission system (comprising a multilayer plane mirror and a multilayer concave condenser), an extreme ultraviolet lithography mask, a sample scan stage, a photon sieve, a CCD camera, a PC, an vibration isolation platform, a vacuum chamber and a multilayer half-transparent half-reflecting mirror. In the defect detection system for the extreme ultraviolet lithography mask, a conventional Schwarzchild lens is replaced by the photon sieve, so that imaging of the mask by an extreme ultraviolet band is realized, and thus defects on the mask are detected. Due to the fact of replacement of the conventional Schwarzchild lens which is difficult to process, high in cost and large in volume by the photon sieve which has the characteristics of small volume, good workability, low cost and high resolution ratio, the defect detection system for the extreme ultraviolet lithography mask is realized in lower cost, smaller volume and high resolution ratio.
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Description

technical field

[0001] The invention relates to the technical field of integrated circuit photolithography in semiconductor science, in particular to an extreme ultraviolet (extreme ultra-violet, EUV) photolithography mask defect detection system. Background technique

[0002] Since the 1970s, the semiconductor industry has continuously reduced the graphic size of integrated circuits according to Moore's Law, making the number of transistors on the central processing unit (CPU) in computers double every two years. Extreme ultraviolet lithography is aimed at the 22nm node as the next generation of advanced lithography technology, opening up a new path of faster speed, smaller size and cheaper price for the semiconductor industry. However, through the difficult progress of EUV lithography technology, we can realize that the development of lithography technology is not just a lithography machine. The mutual cooperation and optimization of other links, such as the need for suita...

Claims

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