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A method for efficiently accessing a flash memory block state management table in a flash memory storage devic

A flash memory storage and block state technology, applied in memory systems, electrical digital data processing, memory architecture access/allocation, etc. To achieve the effect of reducing the number of reads, avoiding losses, and improving execution efficiency

Inactive Publication Date: 2019-03-01
JIANGSU HUACUN ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Only the segment of the currently accessed block will be saved in the memory, and the other segments will be stored in the flash memory. The segments of the flash memory are taken out from the flash memory and put into the internal memory. This method increases the number of reads and writes of the flash memory, which is likely to cause the loss of the flash memory and increase the time for reading and writing. Therefore, an improved technology is urgently needed to solve the problems in the prior art. this problem exists

Method used

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  • A method for efficiently accessing a flash memory block state management table in a flash memory storage devic
  • A method for efficiently accessing a flash memory block state management table in a flash memory storage devic
  • A method for efficiently accessing a flash memory block state management table in a flash memory storage devic

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Embodiment 1

[0033] Embodiment one, such as figure 2 As shown, two segments are now stored in the memory, and which segment is to be written back to the flash memory is determined according to the hit rate of the segment. For example, segment a->segment c->segment a- >Segment d keeps repeating this situation. First store segment a in the memory, and then store segment c, because segment a does not need to be taken out from the flash memory in memory, and then write segment c back according to the hit rate In the flash memory, and then read the segment d into the memory, which greatly improves the execution efficiency.

Embodiment 2

[0034] Embodiment two, such as image 3 As shown, the traditional method: if the block-related block state management table segments are used in the following order: segment a->segment c->segment a->segment d keeps repeating the cycle, so the operation process will become Write segment a to flash memory, read segment c from flash memory, then write segment c to flash memory, read segment a from flash memory, write segment a to flash memory, and then write Segment d is read to the internal memory, and it is carried out repeatedly, so that the number of times of reading and writing of the flash memory is increased, the loss of the flash memory is higher than that of embodiment one, and the time of reading and writing is longer than that of embodiment one.

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Abstract

The invention discloses a method for effectively accessing a flash memory block state management table in a flash memory storage device. The method includes steps of 1, confirming a segment of a current block in use; step 2: The hit ratio of this segment is +1; 3, confirming whether that segment exist in the memory, if so, directly ending, if not, proceeding to the next step; 4, confirming whetherto write that memory segment back to the flash memory, if so, proceeding to the next step, if not, skipping to the step 6; 5, determining that segmentation of the flash memory according to the hit rate; 6, reading that segments relate to the currently used blocks from the flash memory and putting the segments into the memory. The invention can effectively manage the block state management table,reduce the read times of the flash memory, avoid accelerating the loss of the flash memory and greatly improve the execution efficiency.

Description

technical field [0001] The invention relates to the technical field of storage devices, in particular to a method for effectively accessing a flash memory block state management table in a flash memory storage device. Background technique [0002] Flash memory is a long-life non-volatile memory. Data deletion is not in units of individual bytes but in units of fixed blocks. The block size is generally 256KB to 20MB. Flash memory is electronically erasable only A variant of read memory (EEPROM), the difference between flash memory and EEPROM is that EEPROM can be deleted and rewritten at the byte level instead of erasing the entire chip, while most chips of flash memory need to be erased in blocks. [0003] There are n blocks in the flash memory, and each block has a different state according to the requirements, including unused or used, and the used blocks have various states according to different tasks. Therefore, it is necessary to use a block state management table to ...

Claims

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Application Information

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IPC IPC(8): G06F12/02
CPCG06F12/0246G06F2212/7211
Inventor 黄中柱李庭育魏智汎张盛豪
Owner JIANGSU HUACUN ELECTRONICS TECH CO LTD