Interconnect structure and method of forming same

Abstract

A semiconductor device includes: a first conductive structure having sidewalls and a bottom surface, the first conductive structure extending through one or more isolation layers formed on a substrate; and an insulation layer disposed between at least one of the sidewalls of the first conductive structure and respective sidewalls of the one or more isolation layers, wherein the first conductive structure is electrically coupled to a second conductive structure through at least the bottom surface.

Description

technical field [0001] The disclosed embodiments are related to a semiconductor technology, and in particular to a semiconductor device. Background technique [0002] The semiconductor industry has made significant progress in the pursuit of higher source density at lower cost. Technological advances in semiconductor components [eg, integrated circuits (ICs)], materials, and design have yielded ever smaller and more complex circuits. In the advancement of semiconductor devices, functional density (eg, the number of interconnected elements per wafer area) has generally increased, while geometric dimensions have decreased. Such size reduction processes typically provide benefits by increasing production efficiency and reducing associated costs. [0003] However, increased functional density has increased the complexity of semiconductor elements, for example by shrinking the distance between interconnected elements, and the number of layers per wafer area. Thus, there is a g...

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Problems solved by technology

[0004] Therefore, conventional semiconductor component fabrication and handling is not entirely satisfactory

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