Method for preparing infrared detector
An infrared detector and dielectric layer technology, which is applied in the field of infrared detectors, can solve the problems of increased detector dead points, poor conductivity, and low yield, so as to enhance conductivity and reliability, and solve the problem of pixel size. Small, repeatable results
Inactive Publication Date: 2019-03-15
WUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO LTD
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Problems solved by technology
The area of the infrared pixel becomes smaller and smaller in equal proportion, but the area of the pixel bridge pier cannot be changed in this way, and the influence of the bridge pier on the conductivity must also be considered. If the area of the bridge pier is too small, the poor conductivity of the pixel will lead to The number of dead pixels in the detector increases, and it will also challenge the stability and reliability of the bridge pier, resulting in low yield and poor performance
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[0046] Figure 14 It is a schematic flow chart of the preparation method of an infrared detector of the present invention. Such as Figure 14 Shown, a kind of preparation method of infrared detector generally can comprise the following steps:
[0047] S1. Uniformly coating polyimide layer 2 on integrated circuit wafer substrate 1, and curing at high temperature;
[0048] S2. Coating photoresist on the polyimide 2, and performing plasma reactive etching on the polyimide to form the channel pattern I3 at the pier;
[0049] S3. depositing the first dielectric layer 4 to cover the polyimide;
[0050] S4. Depositing the thermally sensitive film 5 and the second dielectric layer 6 in sequence; and etching the second dielectric layer 6 and the thermally sensitive film 5 by photolithography to form a predetermined pattern;
[0051] S5. depositing the third dielectric layer 7 as a protective film;
[0052] S6. Coating photoresist and etching the bridge pier to form channel pattern...
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Abstract
The invention provides a method fro preparing an infrared detector, and relates to the technical field of infrared detectors. The method comprises the steps of coating a polyimide layer; coating a photoresist, and performing plasma reactive etching on the polyimide to form a channel pattern I at a pier; depositing a dielectric layer to wrap the polyimide; depositing a heat sensitive film and the dielectric layer; forming a pattern; depositing the dielectric layer as a protective film; coating the photoresist, etching a channel pattern II at the pier; depositing a thick metal to fill the channel pattern II, and patterning; on the dielectric layer on the heat sensitive film, etching to form a groove-like structure; depositing a metal, and patterning; depositing a protective layer of the dielectric layer; conducting lithographic etching on a release channel; releasing a polyimide layer to form a pixel structure supported and suspended by the pier. The invention provides the method for preparing the infrared detector, and the method strengthens the conductivity and the reliability of a pixel, improves and solves the novel problem introduced by the reduction of the pixel size, has the advantages of stable process and good repeatability, and is suitable for large-scale online production.
Description
technical field [0001] The invention relates to the technical field of infrared detectors, in particular to a preparation method of an infrared detector. Background technique [0002] An infrared detector is a detector that detects infrared radiation heat emitted by an object. All objects above absolute zero have the characteristic of emitting radiant heat. The higher the temperature, the greater the total energy radiated, and the more short-wave components. The wavelength of thermal radiation emitted by objects at or near normal temperature is concentrated in the far-infrared band, which cannot be recognized by human eyes. Therefore, in the absence of sunlight, starlight, moonlight and other lighting conditions, human eyes cannot recognize surrounding objects. However, the infrared radiant heat and electromagnetic waves emitted by these objects can convert the radiant heat signal into an easily identifiable electrical signal through an infrared detector, and then after pro...
Claims
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Login to View More IPC IPC(8): G01J5/10
CPCG01J5/10G01J2005/0077
Inventor许勇王大甲周龙飞王春雷
OwnerWUXI YUANCHUANGHUAXIN MICROELECTROMECHANICAL CO LTD