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Three-dimensional memory device with semiconductor plug formed using backside substrate thinning

A storage device and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve the problem of high cost

Active Publication Date: 2020-03-27
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly
As a result, the storage density of planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device with semiconductor plug formed using backside substrate thinning
  • Three-dimensional memory device with semiconductor plug formed using backside substrate thinning
  • Three-dimensional memory device with semiconductor plug formed using backside substrate thinning

Examples

Experimental program
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Embodiment Construction

[0015] While specific configurations and arrangements are discussed, it should be understood that this is done for illustration purposes only. A person skilled in the relevant art will recognize that other configurations and arrangements may be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the relevant art that the present disclosure may also be used in various other applications.

[0016] It should be noted that references in the specification to "one embodiment," "an embodiment," "exemplary embodiment," "some embodiments," etc. indicate that the described embodiments may include a particular feature, structure, or characteristic, But each embodiment may not necessarily include that particular feature, structure or characteristic. Moreover, such phrases are not necessarily referring to the same embodiment. Furthermore, when a particular feature, structure or characteristic is described in conjunction with...

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PUM

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Abstract

Embodiments of 3D memory devices and methods of forming the same are disclosed. In an example, a 3D memory device includes: a memory stack including alternating conductive and dielectric layers; a channel structure extending vertically through the memory stack; and a semiconductor layer above the memory stack. The channel structure includes a channel plug in a lower portion of the channel structure, a storage film along a sidewall of the channel structure, and a semiconductor channel above the storage film and in contact with the channel plug. The semiconductor layer includes a semiconductor plug over and in contact with the semiconductor channel.

Description

technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] Planar memory cells are scaled to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as the feature size of memory cells approaches the lower limit, planar processes and fabrication techniques become challenging and costly. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of 3D memory devices and methods of forming the same are disclosed herein. [0005] In one example, a 3D memory device includes: a memory stack including alterna...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11524H01L27/11551H01L27/1157H01L27/11578H10B41/27H10B41/35H10B41/20H10B43/10H10B43/20H10B43/27H10B43/35H10B43/50
CPCH10B43/35H10B43/27H01L29/1037G11C16/0483H01L24/08H01L2224/80895H01L2224/80896H01L2224/80905H01L2224/08225H01L2224/08145H01L24/80H01L2924/00014H10B41/27H01L21/8221H01L27/0688H01L23/3114H10B41/20H10B43/10H10B43/20
Inventor 刘沙沙肖莉红王恩博卢峰徐前兵
Owner YANGTZE MEMORY TECH CO LTD