Low capacitance discharge tube array used for G.fast

A discharge tube and low-capacity technology, which is applied in the direction of circuits, electrical components, and electric solid devices, can solve the problems that TVS devices cannot meet the requirements of G•fast applications, and achieve the effects of reducing residual voltage, high production efficiency, and time-consuming

Pending Publication Date: 2019-03-22
捷捷半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Current TVS devices cannot meet G•fast applications

Method used

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  • Low capacitance discharge tube array used for G.fast
  • Low capacitance discharge tube array used for G.fast
  • Low capacitance discharge tube array used for G.fast

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Example 1, such as Figure 4 As shown, a low-capacity discharge tube array for G•fast includes a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, a sixth lead 6, a first low Capacitance diode chip 7, second low-capacity diode chip 8, third low-capacity diode chip 9, fourth low-capacity diode chip 10, discharge tube chip 11 and plastic package 12;

[0033] The first lead 1, the second lead 2, and the third lead 3 share the first patch base island 1-1, and the fourth lead 4, the fifth lead 5, and the sixth lead 6 have the second patch base island 2-1 respectively. , the third patch base island 3-1 and the fourth patch base island 4-1;

[0034] The back of the first low-capacity diode chip 7, the second low-capacity diode chip 8, the third low-capacity diode chip 9 and the fourth low-capacity diode chip 10 is a cathode, and the surface is an anode;

[0035] The cathode of the first low-capacity diode chip 7 is welded to the common first pat...

Embodiment 2

[0044] Example 2, such as Figure 5 , a low-capacity discharge tube array for G•fast, including a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, a sixth lead 6, a first low-capacity diode Chip 7, second low-capacity diode chip 8, third low-capacity diode chip 9, fourth low-capacity diode chip 10, discharge tube chip 11 and plastic package 12;

[0045] The first lead 1, the second lead 2, and the third lead 3 share the first patch base island 1-1, and the fourth lead 4, the fifth lead 5, and the sixth lead 6 have the second patch base island 2-1 respectively. , the third patch base island 3-1 and the fourth patch base island 4-1;

[0046] The back side of the first low-capacity diode chip 7, the second low-capacity diode chip 8, the third low-capacity diode chip 9 and the fourth low-capacity diode chip 10 is an anode, and the surface is a cathode;

[0047] The anode of the first low-capacity diode chip 7 is welded to the second patch base isla...

Embodiment 3

[0053] Example 3, such as Figure 6 , a low-capacity discharge tube array for G•fast, including a first lead 1, a second lead 2, a third lead 3, a fourth lead 4, a fifth lead 5, a sixth lead 6, a first low-capacity diode Chip 7, second low-capacity diode chip 8, third low-capacity diode chip 9, fourth low-capacity diode chip 10, discharge tube chip 11 and plastic package 12;

[0054] The first lead 1, the second lead 2, and the third lead 3 share the first patch base island 1-1, and the fourth lead 4, the fifth lead 5, and the sixth lead 6 have the second patch base island 2-1 respectively. , the third patch base island 3-1 and the fourth patch base island 4-1;

[0055] The back side of the first low-capacity diode chip 7 and the second low-capacity diode chip 8 are cathodes, and the front side is an anode;

[0056] The back of the third low-capacity diode chip 9 and the fourth low-capacity diode chip 10 are anodes, and the surfaces are cathodes;

[0057] The cathode of the...

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PUM

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Abstract

The invention discloses a low capacitance discharge tube array used for G.fast. The array comprises a discharge tube chip, four low capacitance diode chips, six leads and a plastic package. The first,second and third leads share a first chip base island. The fourth, fifth, and sixth leads respectively have second, third, and fourth chip base islands. The back surface of the low capacitance diodechips is a cathode, and the surface is an anode. Cathodes of the first, second, third, and fourth low capacitance diode chips respectively welded with the first, first, second, and fourth chip base islands, and the anodes are respectively welded with the second, fourth, third, and third chip base islands. The discharge tube chip is welded with the first chip base island, and the front surface is welded with the third chip base island. The discharge tube chip, the low capacitance diode chip and the leads are all packaged in the plastic body. The device has advantages of low capacitance, low residual voltage and small package area, and is very suitable for applications of G.fast.

Description

technical field [0001] The invention relates to the technical field of semiconductor power devices, in particular to a G•fast low-capacity discharge tube array. Background technique [0002] With the continuous development of applications such as cloud computing, big data, and the Internet of Things, people's requirements for data rates are getting higher and higher; at the same time, fierce market competition has forced network operators to improve network structures and provide high-speed services. Undoubtedly, optical fiber network is the trend of future development, and in the period of transition from copper-based access network to pure optical fiber network, optical fiber network is gradually becoming familiar to users. However, it is not beneficial to directly connect optical fiber to user premises, and in some cases (such as accessing optical fiber in old buildings) the cost is extremely high, in order to find a quick and cost-effective way to increase Gigabit high-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/07H01L23/495
CPCH01L23/49575H01L25/072H01L2224/49113H01L2224/48247H01L2224/48091H01L2924/00014
Inventor 庄翔何新建张超
Owner 捷捷半导体有限公司
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