Method for measuring bonding strength and bonding wafer using the same

A bonding strength and measurement method technology, which is applied in the direction of measuring devices, mechanical devices, semiconductor/solid-state device testing/measurement, etc., can solve problems such as inaccurate measurement of the gap length L, inaccurate calculation of bonding strength, etc., and achieve simplicity Efficient measurement, the effect of improving accuracy

Active Publication Date: 2021-12-07
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the BSI process, there is metal copper on the bonded wafer, and IR is difficult to penetrate, so the measurement of the gap length L is inaccurate, which leads to inaccurate calculation of the bonding strength

Method used

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  • Method for measuring bonding strength and bonding wafer using the same
  • Method for measuring bonding strength and bonding wafer using the same
  • Method for measuring bonding strength and bonding wafer using the same

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Embodiment Construction

[0036] In the following, the present invention will be described in detail and specifically through specific examples, so as to better understand the present invention, but the following examples do not limit the scope of the present invention.

[0037] Such as Figure 3-4 As shown, this embodiment provides a method for measuring bonding strength, which is suitable for bonding wafers; including steps:

[0038] Step S1, inserting the blade parallel to the bonded wafer between the two wafers of the bonded wafer, so that a gap is formed between the two wafers, and recording the position of the cutter head of the blade as the initial position;

[0039] Step S2, placing the bonded wafer inserted into the blade horizontally, and on the upper surface of the bonded wafer, starting from the initial position, from the edge of the bonded wafer inward Setting a plurality of measuring points in sequence; step S3, using a distance detector fixed at a preset height to sequentially detect an...

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Abstract

The invention discloses a method for measuring bonding strength and a bonded wafer using the method. The method includes steps: step S1, using a blade to create a gap between two wafers, and recording the position of the blade is the initial position; step S2, on the upper surface of the bonded wafer, with the initial position as the starting point, a plurality of measurement points are sequentially set from the edge of the bonded wafer inward; step S3, using a distance detector to detect each measurement point in turn and record the distance from the point to the preset height; step S4, compare the distance between every two adjacent measurement points, and use the previous one of the two measurement points with the same distance as the end position; step S5, set the initial position to the end position The length between the positions is defined as the length of the gap, and the bond strength of the bonded wafers is calculated. The method for measuring the bonding strength of the invention realizes the simple and effective measurement of the bonding strength and improves the accuracy of the measurement; it can be widely used in all bonding technologies of semiconductors.

Description

technical field [0001] The invention belongs to the technical field of bonding technology, and relates to a method for calculating wafer bonding strength, in particular to a method for measuring bonding strength and a bonded wafer using the measuring method. Background technique [0002] In the BSI process, two wafers need to be bonded together. During bonding, the weaker bonding force (Van der Waals force) at room temperature is converted into a stronger covalent bond form through high-temperature annealing. This process It is called bonding. The bonding strength bondstrength after bonding can be measured by the IR penetration method. When the traditional method is used for measurement, the gap length L is measured by IR penetration, and then the bonding strength is calculated by the following formula (a). The meaning of each parameter in the formula Such as figure 1 shown. [0003] [0004] The traditional method for measuring the bonding strength is: 1) Insert the b...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66G01N19/04
CPCG01N19/04H01L22/12H01L22/20
Inventor 曹玉荣李虎张志刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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