The invention provides a method for measuring
bonding strength, which belongs to the technical field of
semiconductor manufacturing, comprising: embedding a blade between two bonding wafers along the bonding surface, so as to generate a gap between the two bonding wafers , measure the blade to get the embedding depth of the blade; place two bonded wafers horizontally, place a
laser beam along the line connecting the center of the blade and the center of the bonding surface, from the direction opposite to the embedding direction of the blade, along any The surface of the bonded
wafer is horizontally incident, and the horizontal straight-line distance traveled by the
laser beam before being reflected by the deformed bonded
wafer is collected, and processed according to the
diameter, embedding depth and horizontal straight-line distance of the bonded
wafer The length of the gap is obtained; the
bond strength is obtained by
processing according to the formula. The beneficial effect of the present invention is that it can solve the problem of measuring the
bond strength of graphic chips (such as graphic chips with
metal wiring) that cannot penetrate or have poor penetration ability of IR, can perform simple and effective measurement, and can improve the accuracy of measurement.