Method for measuring bonding strength

A bonding strength and bonding technology, which is applied to measuring devices, instruments, and mechanical devices, can solve problems such as inaccurate calculation of bonding strength and inaccurate measurement of gap length L, and achieve simple and effective measurement and improve accuracy Effect

Active Publication Date: 2019-03-29
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
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Problems solved by technology

[0017] However, in the BSI process, there is metal copper on the bonded wafer, and IR is difficult to penetrate, which leads to inaccurate measurement of the gap length L, which leads to inaccurate calculation of the bonding strength

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  • Method for measuring bonding strength
  • Method for measuring bonding strength

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Embodiment Construction

[0084] It should be noted that, in the case of no conflict, the following technical solutions and technical features can be combined with each other.

[0085] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0086] Such as Figure 2-5 As shown, a method for measuring the bonding strength is suitable for measuring the bonding strength between two bonded wafers. There is a bonding surface between the two bonded wafers, which can realize accurate measurement of the gap length. A convenient method for calculating bond strength includes the following specific steps:

[0087] Step S1, embedding a blade between two bonded wafers along the bonding surface to create a gap between the two bonded wafers, and measuring the blade to obtain the embedding depth of the blade;

[0088] Step S2, placing two bonded wafers horizontally, and injecting a laser beam horizontally along the line connecting the center of the ...

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Abstract

The invention provides a method for measuring bonding strength, wherein the method belongs to the field of semiconductor manufacturing technology. The method comprises the steps of embedding a blade into a space between two bonding wafers along a bonding surface for generating a slit between the two bonding wafers, measuring the blade for obtaining an embedding depth of the blade; horizontally placing the two bonding wafers, horizontally emitting a laser beam along a connecting line between a blade center and a bonding surface center in an opposite direction of the embedding direction of the blade along the surface of a random bonding wafer, acquiring a horizontal linear distance of the laser beam along the surface of the bonding wafer before reflection of a deformed bonding wafer, and performing processing according to the diameter and the embedding depth of the bonding wafer and the horizontal linear distance; and performing processing according to a formula for obtaining the bondingstrength. The method has beneficial effects of settling a problem of measuring the bonding strength of a pattern plate (such as the pattern plate with metal wirings) which cannot be penetrated by IRor has low penetrating capability. The method can perform simple and effective measurement and can improve measurement accuracy.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for measuring bonding strength. Background technique [0002] In the back-illuminated sensor (Back Side Illumination, BSI) process, two wafers need to be bonded together, and the weak bonding force (Van der Waals force) at room temperature is converted into strength by high-temperature annealing during bonding. Higher forms of covalent bonds, this process is called bonding (bonding). [0003] The bonding strength (bond strength) after bonding can be measured by an infrared (Infrared Radiation, IR) penetration method. Such as figure 1 As shown, when measuring, firstly, insert the blade into the two wafers that have been bonded (defined as figure 1 The upper wafer is the first wafer, and the lower wafer is the second wafer), so that a gap is formed between the two wafers, and then, the infrared device is used to measure the gap length L through IR pe...

Claims

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Application Information

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IPC IPC(8): G01N19/04G01B11/02
CPCG01B11/02G01N19/04
Inventor 曹玉荣李虎张志刚
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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