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Flexible aluminum nitride film and manufacturing method thereof

A technology of aluminum nitride film and aluminum nitride, which is applied in the field of flexibility, can solve the problems of low reliability, low energy of deposited ions, and flexible materials that cannot meet the requirements of flexibility, so as to achieve the effect of preventing pinholes and widening the use of space

Active Publication Date: 2022-03-18
INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The deposition ion energy produced by these processes is low, and the bonding force between the AlN film and the substrate is small. In the flexible aluminum nitride film device with high reliability, there is often a problem of low reliability, which leads to the deterioration of device performance.
At the same time, the current aluminum nitride film substrate layer is mainly Si(100), Si(111), Pt(100) / SiO 2 / Si (100) single crystal substrate and other hard substrate layers, which generally rely on reducing the thickness of the rigid substrate layer to make the aluminum nitride film flexible, but the flexible material made by this method still cannot meet the requirements for flexibility. Require

Method used

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  • Flexible aluminum nitride film and manufacturing method thereof
  • Flexible aluminum nitride film and manufacturing method thereof
  • Flexible aluminum nitride film and manufacturing method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0067] Example 1: Using flexible metal aluminum foil as the substrate layer 31 with a surface roughness of 10 nm and a thickness of 12 μm, aluminum nitride ceramics as the target material, and vacuuming to 3×10 -3 Pa, open the nitrogen valve, adjust the nitrogen flow rate to 20sccm, and the vacuum degree to 2×10 -2 Pa, turn on the Hall ion source, adjust the voltage to 800V, the current to 0.1A, the processing time to 10min, and the thickness of the obtained first aluminum nitride film layer 21 is 5nm.

[0068] Turn down the flow rate of nitrogen gas to 5 sccm, and the flow rate of argon gas to 40 sccm, so that the vacuum degree of the vacuum chamber is 0.1 Pa. The magnetron sputtering power is 80w, the film deposition time is 1min, and the obtained second aluminum nitride film layer 22 has a thickness of 15nm.

[0069] After testing, the thickness of the aluminum nitride film layer 20 is 20nm, the purity is ≥99%, the bonding force between the aluminum nitride film layer 20 a...

Embodiment 2

[0070] Example 2: Using flexible metal aluminum foil as the substrate layer 31 with a surface roughness of 0.4 μm and a thickness of 18 μm, aluminum nitride ceramics as the target material, and vacuuming to 3×10 -3 Pa, open the nitrogen valve, adjust the nitrogen flow rate to 50 sccm, and the vacuum degree to 5.0×10 - 2 Pa, turn on the Hall ion source, adjust the voltage to 2000V, the current to 2A, the processing time to 20min, and obtain the first aluminum nitride film layer 21 with a thickness of 10nm.

[0071]The flow rate of nitrogen gas is reduced to 10 sccm, and the flow rate of argon gas is 100 sccm, so that the vacuum degree of the vacuum chamber is 0.5 Pa. The magnetron sputtering power is 200w, the film deposition time is 10min, and the obtained second aluminum nitride film layer 22 has a thickness of 1.99 μm.

[0072] After testing, the thickness of the aluminum nitride film layer 20 is 2 μm, the purity is ≥99%, the bonding force between the aluminum nitride film...

Embodiment 3

[0073] Example 3: Using flexible copper foil as the substrate layer 31 with a surface roughness of 10 nm and a thickness of 12 μm, copper, aluminum metal and aluminum nitride ceramics as the target material, vacuuming to 3×10 -3 Pa, open the argon gas valve, adjust the argon gas flow rate to 15 sccm, so that the vacuum degree is 1.5×10 -2 Pa, turn on the magnetic filter multi-arc ion plating power supply (copper), adjust the arc current to 55A, and deposit for 2 minutes to form the first transition film layer 32 . Turn off the magnetic filter multi-arc ion plating power supply (copper), turn on the magnetic filter multi-arc ion plating power supply (aluminum), adjust the arc current to 55A, and deposit for 2 minutes to form the second transition film layer 33 and the aluminum substrate 10. The obtained first transition film layer 32 has a thickness of 20 nm, the second transition film layer 33 has a thickness of 5 nm, and the aluminum substrate 10 has a thickness of 15 nm.

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Abstract

A flexible aluminum nitride film and a manufacturing method thereof, comprising an aluminum substrate and an aluminum nitride film layer, the aluminum nitride film layer comprising a first aluminum nitride film layer and a second aluminum nitride film layer, the first aluminum nitride film layer The aluminum nitride film layer and the second aluminum nitride film layer are sequentially formed on the aluminum substrate, and the first aluminum nitride film layer is a film layer formed by nitriding the surface of the aluminum substrate. The bonding force between the aluminum nitride film layer and the substrate in the flexible aluminum nitride film is relatively strong.

Description

technical field [0001] The invention relates to the field of flexible technology, in particular to a flexible aluminum nitride film and a manufacturing method thereof. Background technique [0002] In the 21st century, information, materials, and energy have become the themes of scientific and technological development. How to prepare materials that meet people's needs and have excellent properties has attracted great attention from scientists. As a functional material, piezoelectric materials can realize the conversion between mechanical energy and electrical energy. Since the piezoelectric effect was discovered, research on piezoelectric materials has never stopped, and piezoelectric materials have been widely used in electronics, communications, medical and health, national defense and other fields. In recent years, with the development of microelectromechanical systems (MEMS) technology, piezoelectric thin film materials have been widely used in sensors, actuators, tran...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/32C23C14/20C23C14/16
CPCC23C14/0641C23C14/16C23C14/20C23C14/325C23C14/35
Inventor 冯雪王志建陈颖
Owner INST OF FLEXIBLE ELECTRONICS TECH OF THU ZHEJIANG