Magneto-resistive random access memory and its preparation method
A random access memory and magnetoresistive technology, applied in the field of memory, can solve problems affecting device performance and yield rate, and achieve the effect of avoiding oxidation of surface materials and improving device performance and yield rate
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0035] As introduced in the background art, the exposure of the CMOS metal connection layer in the manufacturing method of the MRAM in the prior art affects device performance and yield. The inventors of the present invention conducted research on the above problems, and proposed a method for preparing a magnetoresistive random access memory, including the following steps: S1, forming an MTJ metal interconnection layer 200a and a CMOS metal connection layer 200b on a CMOS; S2, forming Form the first conductive layer 203a on the MTJ metal interconnection layer 200a, and form the second conductive layer 203b on the CMOS metal connection layer 200b; S3, form the first metal isolation layer 204a on the first conductive layer 203a, and form the second conductive layer 203b on the second conductive layer A second metal isolation layer 204b is formed on the layer 203b, the first metal isolation layer 204a and the second metal isolation layer 204b both include a diffusion barrier layer...
Embodiment 1
[0060] The preparation method of the magnetoresistive random access memory adopted in this embodiment comprises the following steps:
[0061] Forming the MTJ metal interconnection layer 200a and the CMOS metal connection layer 200b on the CMOS by using metal Cu;
[0062] Use SiN or SiCN to form the first etch barrier layer 201 on the first surface of the MTJ metal interconnection layer 200a and the CMOS metal connection layer 200b where the surface away from the CMOS is located, and use SiO 2 A first insulating layer 202 is formed on the first etch stop layer 201, such as figure 1 shown;
[0063] Form a first via hole and a second via hole in the first etching barrier layer 201 and the first insulating layer 202, the first via hole communicates with the MTJ metal interconnection layer 200a, and the second via hole communicates with the MTJ metal interconnection layer 200a Connected, fill metal Cu in the first through hole and the second through hole, form the first conductiv...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More