Photoelectric conversion element and photoelectric conversion device
A technology of photoelectric conversion elements and electrodes, applied in electrical components, photovoltaic power generation, circuits, etc., can solve the problem of reducing the area of sunlight and achieve the effect of increasing the amount of current collection
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Embodiment approach 1
[0041]
[0042] Figure 1A A schematic top view showing the back side of the heterojunction back contact cell 10 of Embodiment 1, Figure 1B A schematic enlarged plan view of the rear surface of the heterojunction back contact cell 10 according to Embodiment 1 is shown. Such as Figure 1A as well as Figure 1B As shown, the heterojunction back contact cell 10 according to Embodiment 1 has a p-electrode 7 and an n-electrode 8 on the back side of the n-type semiconductor substrate 1 . The p-electrode 7 is located on the p-type amorphous semiconductor film 3 , and the n-electrode 8 is located on the n-type amorphous semiconductor film 5 . Rectangular island-shaped p-electrodes 7 and n-electrodes 8 extend in the same direction toward the periphery of the n-type semiconductor substrate 1 at intervals. The p-electrode 7 extends closer to the periphery of the n-type semiconductor substrate 1 than the n-electrode 8 arranged beside the p-electrode 7 . The length L1 between the tip...
Embodiment approach 2
[0076] Figure 13A A schematic top view showing the back side of the heterojunction back contact cell 10 according to Embodiment 2, Figure 13B A schematic enlarged plan view of the rear surface of the heterojunction back contact cell 10 according to Embodiment 2 is shown. Such as Figure 13A as well as Figure 13B As shown, the heterojunction back contact cell 10 according to Embodiment 2 is characterized in that an end 7b of the p-electrode 7 close to the n-type semiconductor substrate 1 extends in a direction different from the direction in which the p-electrode 7 extends. In addition, since the p-electrode 7 is not a comb-shaped electrode, a space is provided between the one end 7 b of the p-electrode 7 and the one end 7 b of the p-electrode 7 adjacent to the one end 7 b of the p-electrode 7 .
[0077] The description of Embodiment 2 other than the above is the same as that of Embodiment 1, and therefore, the description thereof will not be repeated.
Embodiment approach 3
[0079] The heterojunction back contact cell 10 according to Embodiment 3 is characterized in that, instead of partial removal of the first stacked body 51 using the etching paste 31 and partial removal of the second stacked body 52 using the etching mask 32, each Partial removal of the first layered body 51 and partial removal of the second laminated body 52 by irradiation of laser light are performed.
[0080] Figure 14 An example of a method of partially removing the first laminate 51 by laser irradiation is illustrated in the schematic cross-sectional view of . Such as Figure 14As shown, the p-type amorphous semiconductor film 3 of the first laminate 51 is partially irradiated with laser light 61 to heat and evaporate the first laminate 51 , whereby partial removal of the first laminate 51 can be performed.
[0081] Figure 15 An example of a method of partially removing the second laminate 52 by laser irradiation is illustrated in the schematic cross-sectional view of...
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