Semiconductor device and method of forming the same

Abstract

A semiconductor device and a method for forming the same, wherein the method includes: providing a substrate having a first fin and a second fin located around the first fin on the substrate; forming a first isolation on the substrate layer, the first isolation layer covers the sidewalls of the first and second fins, and exposes the tops of the first and second fins; removing the second fins, forming a second opening in the first isolation layer; forming a second isolation layer in the second opening; etching back the first isolation layer and the second isolation layer in the second opening until the second isolation layer is exposed The top and part of the sidewall of the main fin form an isolation structure. The invention protects the effective fins through the first isolation layer, avoids pollution to the effective fins during the formation of the second isolation layer, and causes damage to the fins, thereby improving the performance of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing towards higher component density and higher integration. The gate size of planar transistors is getting smaller and smaller, so the gate's ability to control the channel current becomes weaker. It is easy to produce short channel effect, causing leakage current problems, and then affecting the electrical performance of semiconductor devices. [0003] In order to overcome the short channel effect of the transistor and suppress the leakage current, the prior art proposes a fin field effect transistor (Fin FET), a common multi-gate device when the fin field effect transistor is used. The structure of the fin field effect transistor includes : the fin and the dielectric layer ...

AI Technical Summary

Problems solved by technology

[0004] However, as the density of semiconductor devices increases and the size shrinks, the electrical performance and yield of semiconductor devices composed of fin field effect transistors still need to be improved.

Images