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Method for Correcting the Critical Dimension Uniformity of a Photomask for Semiconductor Lithography

A critical dimension, photomask technology, applied in the fields of originals, optics, and optomechanical equipment for optomechanical processing, which can solve the problems of large cost and time of wafer data

Active Publication Date: 2019-04-16
CARL ZEISS SMT GMBH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, obtaining wafer data requires considerable expense and time, which is why it is advantageous to perform this correction in a different way

Method used

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  • Method for Correcting the Critical Dimension Uniformity of a Photomask for Semiconductor Lithography
  • Method for Correcting the Critical Dimension Uniformity of a Photomask for Semiconductor Lithography
  • Method for Correcting the Critical Dimension Uniformity of a Photomask for Semiconductor Lithography

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Embodiment Construction

[0039] In partial diagrams (a) and (b), figure 1 The real lighting conditions in a scanner are illustrated with spot lighting scheme 1 in this example. The left part (a) illustrates the situation where no pixels and no other structures are present in the photomask 2 - the entrance pupil 3 of the projection lens sees the unmodified point-like illumination distribution 4a.

[0040] This should be distinguished from the situation shown in the right partial image (b), where the photomask 2 has been provided with a pixel field 5 . The entrance pupil 3 of the projection lens sees an illumination distribution 4b that has been significantly modified both in terms of intensity and in terms of form compared to the case without pixels. Shown by dashed lines are those components of the illumination light that do not pass through the entrance pupil 3 and are therefore not suitable for exposing the wafer. This illumination distribution can now be established based on the kernel, from meas...

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Abstract

The invention relates to a method for correcting critical dimension uniformity (CDU) of a photomask (2) for semiconductor lithography. The invention relates to a method comprising the steps of determining a conversion coefficient as a calibration parameter, correcting the photomask (2) by writing to a pixel field (5), and verifying the photomask (2) thus corrected. The method is characterized in that the conversion coefficient is used to verify the corrected photomask (2), said conversion coefficient being obtained from a scattering function of the measured pixel field (5).

Description

[0001] Cross References to Related Applications [0002] This application claims priority from German patent application DE 10 2017 123 114.5, the content of which is hereby incorporated in its entirety. technical field [0003] The present invention relates to a method of correcting the critical dimension uniformity (CDU) of a photomask for semiconductor lithography. Background technique [0004] The electrical component is made up of a plurality of structured layers which are created individually and successively until the component is completed. In each case a so-called mask acts as a template, each layer is transferred onto a semiconductor substrate (so-called wafer) by photolithography. In general, a mask consists of a transparent carrier material (such as quartz glass) and a non-transparent material (often called an absorber). The absorber is structured such that light and dark areas are produced on the wafer when the mask is imaged. A photosensitive layer (the so-c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/72G03F1/84
CPCG03F1/72G03F1/84G03F7/70308G03F7/70625G03F7/70191G03F7/70691
Inventor T.塞勒J.韦尔特K.戈哈德V.德米蒂耶夫U.布特格雷特T.谢鲁布尔Y.尤瓦尔佩列茨
Owner CARL ZEISS SMT GMBH