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Amoled panel driving thin film transistor electrical detection method

A technology for thin film transistors and pixel driving circuits, applied in the field of electrical detection of driving thin film transistors, can solve the problem that the electrical detection method of driving thin film transistors is not suitable for AMOLED pixel driving circuits and the like

Active Publication Date: 2021-08-24
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0008] In order to solve the aforementioned problems, it is desired to use a single-gate method to drive the AMOLED pixel drive circuit, but the accompanying problem is that the traditional detection method for driving the thin film transistor is not suitable for the AMOLED pixel drive circuit driven by the single-gate method.

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  • Amoled panel driving thin film transistor electrical detection method
  • Amoled panel driving thin film transistor electrical detection method
  • Amoled panel driving thin film transistor electrical detection method

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Embodiment Construction

[0040] see Figure 2A , which is a schematic diagram of the driving structure of an AMOLED panel using a single gate to drive an AMOLED pixel driving circuit involved in the electrical detection method for driving a thin film transistor of the present invention. The AMOLED panel involved in the present invention includes a plurality of pixel units 1 arranged in an array in the effective display area of ​​the panel, each row of pixel units 1 is connected to corresponding scanning lines G(1), G(2)..., each column of pixel units 1 to connect corresponding data lines R, G, B, W and detection lines S; each pixel unit 1 includes a corresponding number of AMOLED pixel drive circuits, and each AMOLED pixel drive circuit can correspondingly drive a sub-pixel, for example, for the A pixel unit 1 with four RGBW sub-pixels, the pixel unit 1 may include four AMOLED pixel drive circuits to respectively drive the four RGBW sub-pixels, the pixel unit 1 of the nth row is the several AMOLEDs co...

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Abstract

The invention relates to an electrical detection method of a driving thin film transistor of an AMOLED panel. The AMOLED panel involved in the electrical detection method includes: a plurality of pixel units arranged in an array in the effective display area of ​​the panel, each row of pixel units is connected to a corresponding scanning line, and each row of pixel units is connected to a corresponding data line and detection line. line; each pixel unit includes a corresponding AMOLED pixel drive circuit respectively, and the first scan signal (WR) and the second scan signal (RD) of the AMOLED pixel drive circuit included in the nth row of pixel units in the panel are respectively The first scanning signal (WR(n)) and the second scanning signal (RD(n)) of the pixel unit in the nth row, in the panel, the second scanning signal (RD(n)) of the pixel unit in the nth row (n)) is short-circuited with the first scan signal (WR(n+1)) of the pixel unit in row n+1. The present invention adopts a special detection timing design to realize the detection of Vth and k values ​​of the AMOLED panel driven by a single gate method.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a method for detecting the electrical property of a driving thin film transistor of an AMOLED panel. Background technique [0002] Organic light-emitting diode (OLED) display devices have many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, and wide operating temperature range, and are recognized by the industry as the display device with the most development potential. [0003] The OLED display panel can be divided into two types according to the driving method: passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED). Among them, the AMOLED panel has pixels arranged in an array, belongs to the active display type, has high luminous efficiency, and is usually used in large-sized display devices with high definition. [0004] see figure 1 , which is a schematic diagram of an ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G09G3/00G09G3/3225
CPCG09G3/006G09G3/3225
Inventor 曾玉超黄泰钧
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD