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Three-dimensional memory device and manufacturing method thereof

A storage device, three-dimensional technology, applied in the direction of electric solid-state devices, semiconductor devices, electrical components, etc., can solve the problem of high cost

Active Publication Date: 2019-04-16
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as memory cell feature sizes approach lower limits, planar processes and fabrication techniques become more challenging and costly
As a result, the storage density of planar memory cells approaches the upper limit

Method used

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  • Three-dimensional memory device and manufacturing method thereof
  • Three-dimensional memory device and manufacturing method thereof
  • Three-dimensional memory device and manufacturing method thereof

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Embodiment Construction

[0013] While specific configurations and arrangements are discussed, it should be understood that the discussion is for illustration purposes only. Those skilled in the art will recognize that other configurations and arrangements can be used without departing from the spirit and scope of the present disclosure. It will be apparent to those skilled in the art that the present disclosure may also be used in a wide variety of other applications.

[0014] It should be noted that references in the specification to "one embodiment," "an embodiment," "example embodiment," "some embodiments," etc. mean that the described embodiments may include particular features, structures, or characteristics, but not necessarily every Each embodiment includes the particular feature, structure or characteristic. Furthermore, such phrases are not necessarily referring to the same embodiment. Furthermore, where a particular feature, structure, or characteristic is described in conjunction with an ...

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PUM

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Abstract

Embodiments of the invention disclose a three-dimensional (3D) memory device having a memory layer that constrains electron transmission, and a method of forming the same. The method for forming the 3D memory device includes the following operations: forming an initial channel hole in one structure, wherein the structure includes a plurality of first layers and a plurality of second layers alternately disposed over a substrate; forming an offset between the side surface of each of the plurality of first layers and the side surface of each of the plurality of second layers on the sidewall of the initial channel hole to form a channel hole; and forming a channel hole having a channel formation structure to form a semiconductor channel. The channel forming structure may include a memory layerextending in a vertical direction. Thereafter, the plurality of second layers may be replaced with a plurality of gate electrodes.

Description

technical field [0001] Embodiments of the present disclosure relate to three-dimensional (3D) memory devices and methods of manufacturing the same. Background technique [0002] Planar memory cells have been shrunk to smaller sizes by improving process technology, circuit design, programming algorithms, and manufacturing processes. However, as memory cell feature sizes approach the lower limit, planar processes and fabrication techniques become more challenging and costly. As a result, the storage density of planar memory cells approaches the upper limit. [0003] 3D memory architectures can address density limitations in planar memory cells. A 3D memory architecture includes a memory array and peripheral devices for controlling signals to and from the memory array. Contents of the invention [0004] Embodiments of a 3D memory device and a fabrication method for fabricating the 3D memory device are disclosed herein. [0005] In one example, a method for forming a 3D me...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/1157H01L27/11578H10B10/00H10B43/27H10B43/35H10B41/27H10B41/35H10B43/20H10B43/30
CPCH10B43/35H10B43/20H01L29/40117H10B41/27H10B43/27H10B41/35H10B43/30
Inventor 刘峻肖莉红
Owner YANGTZE MEMORY TECH CO LTD