Preparation method of quantum dot light-emitting device and quantum dot light-emitting device

Abstract

The invention relates to the technical field of display, and discloses a preparation method of a quantum dot light-emitting device, and a quantum dot light-emitting device. The preparation method of aquantum dot light-emitting device includes the steps: forming a first electrode layer on a substrate; forming a hole injection layer on the first electrode layer; forming a hole transport layer on the hole injection layer; forming a quantum dot light-emitting layer on the hole transport layer; forming an electron transport layer on the quantum dot light-emitting layer; forming a second electrodelayer on the electron transport layer; and forming a third electrode layer on the second electrode layer, wherein the second electrode layer and the third electrode layer are transparent electrode layers; and the work function of the second electrode layer is greater than the LUMO energy level of the electron transport layer and is smaller than the work function of the third electrode layer. In the preparation method of a quantum dot light-emitting device, the top electrode is prepared as a transparent electrode having a two-layer structure, thus facilitating injection of electrons and improving the transmittance of the top electrode so as to improve the light extraction efficiency.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a preparation method of a quantum dot light emitting device and the quantum dot light emitting device. Background technique [0002] As a new type of luminescent material, quantum dot QD has the advantages of high light color purity, high luminous quantum efficiency, adjustable luminous color, and long service life. It has become a research hotspot for new LED luminescent materials. Therefore, quantum dot light-emitting diodes (QLEDs) using quantum dot materials as the light-emitting layer have become the main direction of research on new display devices. [0003] For display products, due to the requirement of high resolution, the light-emitting unit often adopts a top-emitting structure. In the top emission structure, the top electrode generally adopts a semi-transparent electrode, such as thin Al, Ag, etc., and the transmittance of the thin metal film is low, which affects t...

AI Technical Summary

Problems solved by technology

In the top emission structure, the top electrode generally adopts a semi-transparent electrode, such as thin Al, Ag, etc., and the transmittance of the thin metal film is low, which affects the light extraction efficiency and is not conducive to the improvement of device efficiency.

Images