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Chip for direct in situ characterization of TEM structure-activity correlation and fabrication method thereof

A manufacturing method and chip technology, which are applied in the preparation of test samples, material analysis using radiation, instruments, etc., can solve problems such as the inability to correlate material structure with material physicochemical properties, and achieve the effect of real-time characterization

Active Publication Date: 2021-03-23
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a chip for direct in-situ characterization of TEM structure-activity correlation and its manufacturing method, which is used to solve the problem of material structure and material physicalization that cannot be realized in the prior art. Performance correlation, the problem of in situ characterization of structure-activity correlation

Method used

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  • Chip for direct in situ characterization of TEM structure-activity correlation and fabrication method thereof
  • Chip for direct in situ characterization of TEM structure-activity correlation and fabrication method thereof
  • Chip for direct in situ characterization of TEM structure-activity correlation and fabrication method thereof

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Embodiment 1

[0074] refer to Figure 1 ~ Figure 4 , this embodiment provides a chip for direct in-situ characterization of TEM structure-activity correlation, the chip includes a main chip and a secondary chip, wherein the main chip includes:

[0075] A cantilever beam 17, the cantilever beam 17 includes an observation hole 18; the resonance of the cantilever beam 17 is used to detect the mass change of the sample to be measured on the cantilever beam 17;

[0076] The main chip groove 9, the main chip groove 9 is located below the cantilever beam 17, through which the resonance of the cantilever beam 17 provides an accommodation space;

[0077] The main chip window 10, the main chip window 10 is located below the observation hole 18;

[0078] An air hole, the air hole is located on the outside of the cantilever beam 17 and runs through the main chip, and the air hole includes the air inlet hole 19 of the main chip and the air outlet hole 20 of the main chip;

[0079] The auxiliary chips ...

Embodiment 2

[0097] This embodiment also provides a method for making a chip for direct in-situ characterization of TEM structure-activity correlation, the chip includes a main chip and a secondary chip, wherein making the main chip includes the following steps:

[0098] Provide the main chip substrate;

[0099] Fabricate a cantilever beam, a main chip groove, a main chip window, and an air hole in the main chip substrate; wherein, the cantilever beam includes an observation hole; the main chip groove is located below the cantilever beam, passing through the main chip The groove provides accommodation space for the resonance of the cantilever beam; the main chip window is located below the observation hole; the air hole is located outside the cantilever beam and runs through the main chip, and the air hole includes the air intake of the main chip hole and the air outlet of the main chip; the resonance of the cantilever beam is used to detect the quality change of the sample to be measured on...

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Abstract

The invention provides a chip used for realizing structure activity relationship direct in-situ characterization with a TEM and a manufacturing method thereof. The chip comprises a main chip body andan auxiliary chip body, the main chip body comprises a cantilever beam with an observing hole, a main chip body groove, a main chip body window and an air hole; the auxiliary chip body comprises an auxiliary chip body window used for detecting the quality change of a to-be-detected sample located on the cantilever beam through the resonance of the cantilever beam; the main chip body and the auxiliary chip body are arranged oppositely and separately fixed to a TEM sample pole, and therefore a closed space is formed by the main chip body, the auxiliary chip body and the TEM sample pole; the morphology change of the to-be-detected sample located on the cantilever beam is observed through the auxiliary chip body window, the observing hole and the main chip body window. Through the chip, observation of the morphology change and detection of the quality change can be realized for the same to-be-detected sample in the TEM so as to conduct direct in-situ real-time characterization, and the chip can be widely applied to TEM in-situ characterization of a nanometer material during a gas-solid reaction.

Description

technical field [0001] The invention belongs to the field of TEM in-situ characterization, and relates to a chip for direct in-situ characterization of TEM structure-activity correlation and a manufacturing method thereof. Background technique [0002] So far, the research of nanomaterials has achieved rich results, how to make the research results of nanomaterials to be functionalized and widely used has become the main problem at present. To achieve this breakthrough, correlating the nanostructure with its properties and establishing a clear structure-activity relationship is an effective way to solve the problem. [0003] In the observation of nanostructures, methods such as transmission electron microscopy (TEM), scanning electron microscopy (SEM), and scanning probe microscopy (SPM) have been widely used, and the resolution can reach the single-atom level. However, these methods are mainly limited to the characterization of nanostructure and morphology, and it is diffi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N5/00G01N23/04G01N1/28H01J37/26
CPCG01N1/28G01N5/00G01N23/04H01J37/261
Inventor 李昕欣于海涛许鹏程李伟王雪晴李明
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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