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IGBT temperature rising and thermal resistance composition test device and method

A technology of thermal resistance and temperature rise, applied in the direction of single semiconductor device testing, material thermal development, etc., can solve the problems of complex measurement technology operation, long measurement cycle, difficult to achieve rapid switching and other problems

Active Publication Date: 2019-05-03
BEIJING UNIV OF TECH
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  • Application Information

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Problems solved by technology

Related instruments include Phase11 thermal resistance tester and T3Ster thermal resistance tester, but the price of these two instruments is high, the measurement technology operation is complicated, and the measurement cycle is long
[0004] The existing power MOS tester extracts the thermal resistance of the device under test by collecting the parameters of the MOS reverse parasitic diode. When this method is used for IGBT measurement, it is difficult to achieve fast switching due to the influence of IGBT tail current

Method used

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  • IGBT temperature rising and thermal resistance composition test device and method
  • IGBT temperature rising and thermal resistance composition test device and method
  • IGBT temperature rising and thermal resistance composition test device and method

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Experimental program
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Embodiment Construction

[0026] Firstly, the IGBT100 to be tested is placed on the temperature-adjustable constant temperature platform 400 . Connect the grid 102, collector 103, and emitter 105 wires of the tested IGBT100, and the computer and FPGA cooperate as the control center 201 to complete timing control; the computer is equipped with a human-computer interaction interface; Realize the interactive transmission of data. The output current of the heating power supply 300 passes through the heating power switch 206, the working voltage and current acquisition unit 205, the collector 103 and the emitter 105 of the IGBT under test in turn through the high-current-resistant wire connection, and finally flows to the ground. The control center 201 controls the test current output by the test current source 204, and the test current is connected between the heating power switch 206 and the working voltage and current acquisition unit 205 through the coaxial line or directly connected to the collector of...

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Abstract

The invention relates to an IGBT temperature rising and thermal resistance composition test device and method and belongs to the IGBT reliability design and test field. The method is characterized inthat the IGBT thermal resistance is obtained through collecting voltage drop of an IGBT collector-emitter parasitic diode under a small current. The method is advantaged in that a problem of difficulty in rapid switching due to influence of IGBT trailing current during IGBT measurement utilizing the method collecting parameters of an MOS reverse parasitic diode to extract thermal resistance of a detected device in a power MOS thermal resistance tester in the prior art is solved.

Description

technical field [0001] The technology belongs to the field of IGBT reliability design and testing. The invention is mainly applied to a device and a method for quickly and non-destructively determining the thermal resistance composition of an IGBT. Background technique [0002] With the wide application of IGBT in high-voltage and high-current aspects, the heat generated during its operation is very high, which will lead to an increase in the temperature of the active area of ​​the device, which will accelerate the performance deterioration of the IGBT. The influencing factors of IGBT temperature rise are also related to the materials of each link in the heat dissipation path from the active area to the surrounding environment, including chips of semiconductor materials, solder, package shells, and heat sinks. Therefore, accurately measuring the temperature rise of the IGBT during operation can analyze the package heat dissipation characteristics of the device, and can also...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N25/20G01R31/26
Inventor 冯士维王晟石帮兵李轩白昆
Owner BEIJING UNIV OF TECH