Manufacturing method of semiconductor device structure

Abstract

The embodiment of the invention provides a manufacturing method of a semiconductor device structure. The method comprise the steps of: forming a fin structure on a substrate, forming a gate structureover the fin structure, forming fin spacers over sidewalls of the fin structure and gate spacers over sidewalls of the gate structure, forming a source / drain structure over the fin structure and depositing a dummy material layer to cover the source / drain structure, wherein the dummy material layer is removed faster than the gate spacers during the removal of the dummy material layer, forming a salicide layer over the source / drain structure and the fin spacers, and forming a contact over the salicide layer. The dummy material layer includes Ge, amorphous silicon or spin-on carbon.

Description

technical field [0001] Embodiments of the present disclosure relate to semiconductor device structures and methods of manufacturing the same, and more particularly to semiconductor device structures having silicide layers with larger surface areas and methods of manufacturing the same. Background technique [0002] The semiconductor integrated circuit (integrated circuit, IC) industry continues to grow. Technological advances in IC materials and design have produced many generations of ICs. Each generation has smaller and more complex circuits than the previous generation. [0003] In the subject of integrated circuit innovation, functional density (e.g., the number of interconnected devices per chip area) continues to increase while geometric size (e.g., the smallest component (or line) that can be created by a manufacturing process) continues to shrink . The shrinking process offers the benefits of greater manufacturing efficiency and cost reduction. [0004] Scaling a...

AI Technical Summary

Problems solved by technology

These relatively new types of semiconductor IC devices face process challenges and are not satisfactory in all respects

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