A double-layer stacked differential microwave wide stop band bandpass filter structure

Abstract

The present invention relates to a two-layer stacked differential microwave wide stop-band bandpass filter structure. The structure comprises a first metal layer (1), a first glass substrate (2), a second metal layer (3), a second glass substrate (4) and a third metal layer (5). The first metal layer (1) is located at the upper portion of the first glass substrate (2); the first glass substrate (2) is located at the upper portion of the second metal layer (3); the second metal layer (3) is located at the upper portion of the second glass substrate (4); and the second glass substrate (4) is located at the upper portion of the third metal layer (5). The two-layer stacked differential microwave wide stop-band bandpass filter structure replaces a silicon substrate with a glass substrate to manufacture a three-dimensional passive device, the relative dielectric constant of the glass substrate is much smaller than that of the silicon substrate to eliminate the eddy current effect in the highfrequency circuit, reduce the high-frequency loss of the passive device and improve the quality factor of the passive device so as to reduce the loss of the filter and improve the quality factor of the filter.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing and packaging, and in particular relates to a double-layer stacked differential microwave wide stopband bandpass filter structure. Background technique [0002] In recent years, driven by commercial applications, millimeter wave wireless communication has developed rapidly, and researchers have set their sights on the millimeter wave frequency band in the 30-100GHz frequency band. [0003] Most millimeter-wave interconnects and passive components are in the form of waveguides, which have low losses. However, the volume of the waveguide structure is generally relatively large, the production cost is relatively high, and it is difficult to integrate with a monolithic microwave integrated circuit (Microwave and Milimeter IC, MMIC for short) in a system. Three-dimensional integration technology is to vertically stack traditional two-dimensional integrated circuits. As a key s...

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Problems solved by technology

[0004] However, due to the eddy current effect generated by the semiconductor silicon substrate under high-frequency conditions, large losses are caused, which hinders the wide application of substrate-integrated waveguide structures in three-dimensional integration technology.

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