Two-layer stacked differential microwave bandpass filter

Abstract

The present invention relates to a two-layer stacked differential microwave bandpass filter. The two-layer stacked differential microwave bandpass filter comprises: a first metal layer; a plurality offirst conductor pillars disposed on the first metal layer; a second metal layer arranged on the first conductor pillars and provided with an input radiation window and an output radiation window; a plurality of second conductor pillars arranged on the second metal layer; and a third metal layer arranged on the second conductor pillars and provided with a differential input port and a differentialoutput port, wherein the first metal layer, the first conductor pillars and the second metal layer form at least three coupled resonators, and a plurality of coupling windows are arranged between each two coupled resonators; the second metal layer, the second conductor pillars and the third metal layer form an input resonant cavity and an output resonant cavity. The filter provided by the embodiment obviously inhibits the transmission of the common mode signals, obviously improves the resonance frequency extraction and improves the performances.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing and packaging, and in particular relates to a double-layer stacked differential microwave bandpass filter. Background technique [0002] In recent years, driven by commercial applications, millimeter-wave wireless communication has developed rapidly. Most of the millimeter-wave interconnects and passive devices are in the form of waveguides, and their losses are low. However, waveguide structures are generally bulky, expensive to produce, and difficult to integrate into a system with monolithic microwave integrated circuits (MMICs). Although the low temperature co-fired ceramic (LTCC) that appeared later has stable dielectric constant and low loss in the microwave and millimeter wave frequency bands, its thick substrate and large volume also greatly limit its performance. widely used. [0003] The three-dimensional integration technology is to vertically stack the tradit...

AI Technical Summary

Problems solved by technology

[0004] However, due to the large loss of semiconductor silicon substrates under high frequency conditions, the wide application of substrate-integrated waveguide structures in three-dimensional integration is hindered.

Images