Unlock instant, AI-driven research and patent intelligence for your innovation.

Flash memory and method of forming the same

A memory and flash technology, applied in the field of flash memory and its formation, can solve the problems of poor performance of split-gate flash memory, achieve high erasing efficiency, increase coupling rate, and increase coupling voltage

Active Publication Date: 2020-12-08
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the performance of existing split-gate flash memory is poor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory and method of forming the same
  • Flash memory and method of forming the same
  • Flash memory and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] As the technical background, poor performance of the prior art flash memory.

[0025] A flash memory, please refer to figure 1 , Comprising: a semiconductor substrate 100, the semiconductor substrate 100 includes an erase region and the floating gate region, said floating gate region and adjacent to the erased area and at both sides of the erased area; erased area of ​​the semiconductor substrate 100 structure on the erase gate 150; the floating gate structures are located on the floating gate region of the semiconductor substrate 120; a first sidewall positioned on the floating gate structure 120, 130; 130 covering the first side wall and the floating gate the sidewall word line structures 140, 120 of the floating gate structure 140 is located between the erase gate structure 150 and the word line structure; a second sidewall spacer 140 covering the word line 160 structure; rub the semiconductor substrate in addition to the source region 110; 140 located within the semicon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

A flash memory and a method of forming the same. The flash memory includes: a semiconductor substrate, the semiconductor substrate includes a source line area and a floating gate area, the floating gate area is adjacent to the source line area and is located on both sides of the source line area. ; A source area located in the source line area of ​​the semiconductor substrate; a source line layer located on the source area, the source line layer is electrically connected to the source area; floating gates located on the floating gate areas of the semiconductor substrate respectively The height of the floating gate structure is greater than the height of the source line layer; and the erase gate structure is located on the source line layer. The performance of the flash memory is improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor manufacturing, and more particularly to a method of forming a flash memory. Background technique [0002] Flash memory integrated circuits is an important product in the device. The main features of flash memory in the case of no voltage can maintain long-term information storage. A flash memory having a high integration, faster access speed and other advantages of easy source line, which is widely applied. [0003] The flash memory is divided into two types: a gate stack (stack gate) and split-gate flash memory (split gate) flash memory. Stacked gate flash memory having a floating gate and a control gate positioned above the floating gate. Stacked gate flash memory problems existed in the source line. With different stacked gate flash memory is split gate flash memory is formed as a word line on the source line side gate floating gate. Split gate flash memory can effectively prevent effect through...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11521H10B41/30
Inventor 于涛李冰寒
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP