Deep trench isolation structures

Abstract

The present disclosure relates to deep trench isolation structures. The invention relates to a semiconductor structures and, more particularly, to deep trench isolation structures and methods of manufacture. The structure includes: at least one gate structure on a substrate; an interlevel dielectric material above the substrate; and a trench isolation structure extending into the substrate adjacent to the at least one gate structure and terminating in the interlevel dielectric material above the substrate.

Description

technical field [0001] The present disclosure relates to semiconductor structures, and more particularly, to deep trench isolation structures and methods of fabrication. Background technique [0002] Radio Frequency (RF) devices are used in many different types of communication applications. For example, RF devices may be used in cellular telephones with wireless communication components such as switches, MOSFETs, transistors and diodes. [0003] As cellular phones become more complex and commoditized, there is an increasing need to provide higher performance and lower price points for wireless communication components. For example, a significant portion of the cost of manufacturing an RF switch is the cost of designing for very high linearity so that harmonic distortion is very low and meets product specifications. [0004] RF devices are typically fabricated on high-resistivity silicon wafers or substrates to achieve the required rf linearity. Current trap-rich silicon-...

AI Technical Summary

Problems solved by technology

Devices built on bulk Si substrates are known to suffer from degraded linearity, harmonics, noise and leakage currents, any of which will degrade device performance, requiring higher cost SOI wafers

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