GaN-based light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, and belongs to the field of GaN-based light-emitting diodes. The light emitting diode epitaxial wafer includes a substrate, and a buffer layer, an undoped GaN layer, an N-type doped GaN layer, a low temperature stress releasing layer, a multiple quantum well layer, a low temperature P-type GaN layer, an electron blocking layer, a high temperature P-type GaN layer and a P-type ohmic contact layer which are deposited in order on the substrate. The high temperature P-type GaN layer comprisesat least one composite layer, each composite layer comprises an AlInN layer and a first P-type doped GaN layer, the AlInN layer in each composite layer close to the electron blocking layer is much closer to the electron blocking layer than the first P-type doped GaN layer belonging to the same composite layer, and the AlInN layer is an Al1-xInxN layer, wherein 0<X<0.5.

Description

technical field [0001] The invention relates to the field of GaN-based light-emitting diodes, in particular to a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] A GaN (gallium nitride)-based LED (Light Emitting Diode, light emitting diode) generally includes an epitaxial wafer and electrodes prepared on the epitaxial wafer. The epitaxial wafer usually includes: a substrate, a buffer layer sequentially stacked on the substrate, a non-doped GaN layer, an N-type GaN layer, an MQW (Multiple Quantum Well, multiple quantum well) layer, an electron blocking layer, and a P-type GaN layer. layer and ohmic contact layer. When a current flows, the electrons in the N-type region such as the N-type GaN layer and the holes in the P-type region such as the P-type GaN layer enter the MQW active region and recombine to emit visible light. [0003] In the process of realizing the present invention, the inventors found that the p...

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Problems solved by technology

[0003] In the process of realizing the present invention, the inventors found that the prior art has at least the following problems: the P-type GaN layer is generally doped with high-concentration Mg. Since the activation performance of Mg is not high, high-concentration Mg doping is not conducive to the lateral expansion of holes. Therefore, the effective doping efficiency of the P-type GaN layer is very low, making the current spreading insufficient in the LED

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