Light emitting diode chip and manufacturing method thereof
A technology of light-emitting diodes and chips, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low current lateral expansion effect and high current density, and achieve the effects of increasing reflection, high luminous efficiency, and improving overall luminous efficiency
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Embodiment 1
[0149] This embodiment provides a light emitting diode chip, refer to figure 1 and figure 2 ,include:
[0150] Substrate 10, N-type semiconductor layer 21, active layer 22, P-type semiconductor layer 23, current blocking layer 30, transparent conductive layer 40, N-type electrode 51 and P-type electrode 52;
[0151] The N-type semiconductor layer 21, the active layer 22 and the P-type semiconductor layer 23 are sequentially stacked on the substrate 10, and have a structure extending from the P-type semiconductor layer 23 to the N-type semiconductor layer 21. The formed N step region 24;
[0152] The current blocking layer 30 is disposed on the P-type semiconductor layer 23, and the current blocking layer 30 includes several sublayers distributed at intervals; the transparent conductive layer 40 covers the current blocking layer 30 stacked on the P-type semiconductor layer 23;
[0153] The N-type electrode 51 is disposed on the N-type semiconductor layer 21 of the N step r...
Embodiment 2
[0163] This embodiment provides a light-emitting diode chip. Referring to Embodiment 1, the only difference is that in the current blocking layer, the arrangement of the first sub-layer 31 and the second sub-layer 32 is different.
[0164] The arrangement of the first sublayer 31 and the second sublayer 32 in the P-type semiconductor layer 23 in this embodiment refers to Figure 4 The arrangement of the first through holes 310 and the second through holes 320.
experiment example 1
[0168] The flip-chip light-emitting diode chips of embodiment 1 and embodiment 2 and comparative example 1 were subjected to a comparative test under the same test conditions at a test current of 65mA, and the luminous brightness of the LED chips provided by embodiment 1 of the present invention and embodiment 2 were compared Compared with Comparative Example 1, they were increased by 0.3% and 0.4%.
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Abstract
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