A kind of Gan-based light-emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention discloses a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the field of GaN-based light-emitting diodes. The light-emitting diode epitaxial wafer includes: a substrate, a buffer layer sequentially deposited on the substrate, a non-doped GaN layer, an N-type doped GaN layer, a low-temperature stress release layer, a multi-quantum well layer, and a low-temperature P-type a GaN layer, an electron blocking layer, a high-temperature P-type GaN layer, and a P-type ohmic contact layer, the high-temperature P-type GaN layer includes at least one composite layer, and the composite layer includes an AlInN layer and a first P-type doped GaN layer, The AlInN layer in the composite layer close to the electron blocking layer is closer to the electron blocking layer than the first P-type doped GaN layer in the composite layer, and the AlInN layer is Al 1‑x In x N layer, 0

Description

technical field [0001] 本发明涉及GaN基发光二极管领域,特别涉及一种GaN基发光二极管外延片及其制备方法。 Background technique [0002] GaN(氮化镓)基LED(Light Emitting Diode,发光二极管)一般包括外延片和在外延片上制备的电极。外延片通常包括:衬底、以及顺次层叠在衬底上的缓冲层、非掺杂GaN层、N型GaN层、MQW(Multiple Quantum Well,多量子阱)层、电子阻挡层、P型GaN层和欧姆接触层。当有电流通过时,N型GaN层等N型区的电子和P型GaN层等P型区的空穴进入MQW有源区并且复合,发出可见光。 [0003] 在实现本发明的过程中,发明人发现现有技术至少存在以下问题:P型GaN层一般为高浓Mg掺杂,由于Mg活化性能不高,高浓Mg掺杂不利于空穴横向扩展,因此,P型GaN层的有效掺杂效率很低,使得LED中电流扩展不足。 Contents of the invention [0004] 本发明实施例提供了一种GaN基发光二极管外延片及其制备方法,能够降低Mg掺杂浓度,提高空穴横向扩展能力。 Described technical scheme is as follows: [0005] 第一方面,提供了一种GaN基发光二极管外延片,所述发光二极管外延片包括: [0006] 衬底、在所述衬底上顺次沉积的缓冲层、非掺杂GaN层、N型掺杂GaN层、低温应力释放层、多量子阱层、低温P型GaN层、电子阻挡层、高温P型GaN层、以及P型欧姆接触层,所述高温P型GaN层包括至少一个复合层,所述复合层包括AlInN层和第一P型掺杂GaN层,靠近所述电子阻挡层的复合层中的AlInN层比所属复合层中的第一P型掺杂GaN层更加靠近所述电子阻挡层,所述AlInN层为Al 1-x In x N层,0<X<0.5。 [0007] 可选地,所述AlInN层的厚度为0.5~5nm,所述第一P型掺杂GaN层的厚度为5~10nm。 [0008] 可选地,所述高温P型GaN层包括n个层叠的复合层,3≤n≤5。 [0009] 可选地,所述高温P型GaN层还包括第二P型掺杂GaN层,所述第二P型掺杂GaN层位于所述电子阻挡层与所述...

AI Technical Summary

Problems solved by technology

[0003] In the process of realizing the present invention, the inventors found that the prior art has at least the following problems: the P-type GaN layer is generally doped with high-concentration Mg. Since the activation performance of Mg is not high, high-concentration Mg doping is not conducive to the lateral expansion of holes. Therefore, the effective doping efficiency of the P-type GaN layer is very low, making the current spreading insufficient in the LED

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