Parallel current sharing structure of silicon carbide MOSFETs
A technology of silicon carbide and parallel connection, which is applied in the direction of output power conversion devices, high-efficiency power electronic conversion, electrical components, etc., can solve problems such as false activation and inconsistent driving signals, and achieve simple engineering implementation, consistent activation time, and easy expansion Effect
Active Publication Date: 2019-06-07
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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Problems solved by technology
The present invention solves the problem of wrong turn-on caused by the inconsistency of the drive signal in the parallel structure of the traditional parallel silicon carbide MOSFET, and meets and satisfies the high-power design requirements of the silicon carbide MOSFET
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[0023] The present invention will be further described below with reference to the drawings and specific embodiments.
[0024] The silicon carbide parallel current sharing structure in this example is composed of n stages, such as figure 1 As shown, each stage consists of silicon carbide MOSFETQ 1 , Q 2 ,..., Q n And its drive circuit composition; in each drive circuit, each drive power supply is connected in series with a current-sharing inductor, the current-sharing inductor is connected to the drive resistor, and the drive resistor is connected to a single MOSFET, that is, the drive power u g1 , U g2 ,..., u gn Connect the positive pole of the current sharing inductor L g1 , L g2 ,..., L gn One end of a1, a2, ..., an, current sharing inductor L g1 , L g2 ,..., L gn The other ends b1, b2,..., bn are connected to the driving resistor R g1 , R g2 ,..., R gn One end of the drive resistance is connected to the single silicon carbide MOSFET Q 1 , Q 2 ,..., Q n . Where the current sha...
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The invention discloses a parallel current sharing structure of silicon carbide MOSFETs, which is composed of n stages. N is a positive integer no smaller than 1. Each stage is composed of silicon carbide MOSFETs Q1, Q2, ..., Qn and a driving circuit; in the driving circuit, each driving power supply is serially connected with a current sharing inductor, the current sharing inductor is connected with a driving resistor, the driving resistor is connected with a single MOSFET, that is, positive electrodes of the driving power supplies ug1, ug2, ..., ugn are connected with one ends a1, a2, ..., an of the current sharing inductors Lg1, Lg2, ..., Lgn, the other ends b1, b2, ..., bn of the current sharing inductors Lg1, Lg2, ..., Lgn are connected with one ends of driving resistors Rg1, Rg2, ..., Rgn, and the other ends of the driving resistors are connected with the silicon carbide MOSFETs Q1, Q2, ..., Qn.
Description
Technical field [0001] The invention relates to a silicon carbide switching device topology. Background technique [0002] Currently widely used switching devices are mainly silicon-based MOSFETs and IGBTs. Silicon-based MOSFET has low switching loss, but the conduction loss is very high if the withstand voltage of 1700V and above is required, and the conduction loss of IGBT is low, but the switching loss is very high due to the tail current, and generally cannot be used for high switching frequencies, such as Above 10kHz. The MOSFET switching device using a silicon carbide substrate has the advantage of low conduction loss compared with a silicon substrate MOSFET, and has the advantage of low tail current and low switching loss compared with an IGBT. [0003] Monolithic silicon carbide MOSFETs tend to have lower power. When they are used in higher power applications, they need to be used in parallel to increase the current capacity. However, when using silicon carbide MOSFETs i...
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Login to View More IPC IPC(8): H02M1/088H01F27/30
CPCY02B70/10
Inventor 庞云亭郭心铭韦统振霍群海
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI