A method for manufacturing a display panel and a display panel

Abstract

The invention provides a display panel manufacturing method and a display panel. The method comprises the following steps: a pixel circuit structure is formed on a substrate, forming the pixel circuitstructure comprises forming a grid electrode, a grid insulating layer, an active layer and a source / drain electrode metal layer on the substrate; a photoresist layer is coated on the source / drain electrode metal layer; a part of the photoresist layer that corresponds to the source / drain electrode metal layer and is used for being corresponding to an auxiliary spacer and for forming a channel between the source and drain electrodes is partially removed, and the parts in the photoresist layer corresponding to the positions of a main spacer and the auxiliary spacer are completely removed; a partof the active layer corresponding to the position of the main spacer is reserved, or, a part of the active layer and a part of the source / drain electrode metal layer corresponding to the position ofthe main spacer are reserved; and the residual photoresist layer is removed. According to the preparation method provided by the invention, it is ensured that the grid insulating layer of the part corresponding to the position of the main spacer is not consumed, so that the uniformity of the distance between the auxiliary spacer and the thin-film transistor is guaranteed.

Description

technical field [0001] The present application relates to the field of backlight sources of liquid crystal displays, in particular to a method for manufacturing a display panel and a display panel. Background technique [0002] In the existing technology, in order to increase the aperture ratio, the position of the auxiliary spacer in the display is moved to the position corresponding to the thin film transistor. However, this technology is suitable for the 8.5-generation line. Due to the lack of equipment stability of the 10.5-generation line, the The uniformity of the distance between the auxiliary spacer and the thin film transistor becomes worse. Specifically, during the manufacturing process, since there is no active layer and source-drain electrode metal layer on the base substrate corresponding to the main spacer, the loss of the gate insulating layer is caused during etching, which in turn affects the The distance between the auxiliary spacer and the thin film trans...

AI Technical Summary

Problems solved by technology

[0003] The invention provides a method for preparing a display panel and a display panel, so as to solve the problem of poor uniformity of the distance between auxiliary spacers and thin film transistors

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