Thin film transistor and its manufacturing method, array substrate and display device
A technology for thin film transistors and substrates, applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as short channels, affecting the stability of thin-film transistors, and affecting display quality.
Active Publication Date: 2021-03-19
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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Problems solved by technology
However, in the existing manufacturing method of the top-gate thin film transistor, the length of the channel of the transistor will be significantly shortened, resulting in the short channel effect
The short channel effect will cause the threshold voltage of the thin film transistor to drift negatively, affect the stability of the thin film transistor, and then affect the display quality
Method used
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[0054] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, but should not be construed as a limitation of the present invention.
[0055] In addition, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details.
[0056] It will be understood that, although the terms first, second, etc. may be used herein to describe various e...
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Provided are a thin film transistor, a manufacturing method thereof, an array substrate and a display device. The thin film transistor is formed on a substrate, and includes: an active layer disposed on the substrate, the active layer having a source region, a drain region, and a channel region between the source region and the drain region; a first gate disposed on a side of the active layer away from the substrate; and a second gate disposed on a side of the first gate away from the substrate, wherein the first gate The thickness is smaller than the thickness of the second grid.
Description
technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a thin film transistor and a manufacturing method thereof, an array substrate including the thin film transistor, and a display device. Background technique [0002] Thin film transistors (TFTs) are used as switching devices and driving devices in display devices such as liquid crystal display devices (LCD) and organic light emitting display devices (OLED). The performance of thin film transistors is affected by the material and state of the channel through which charge carriers travel. [0003] Top Gate TFT has better performance than Bottom Gate TFT, including smaller parasitic capacitance, larger on-state current, smaller sub-threshold swing and Due to its higher stability and other advantages, the top-gate thin film transistor has been more and more widely used. However, in the existing manufacturing method of the top-gate thin film transistor, the length of ...
Claims
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IPC IPC(8): H01L29/786H01L21/336H01L29/423H01L27/32G02F1/1368
CPCG02F1/1368H01L29/66969H01L29/24H01L29/78696H01L29/4908H01L27/1225H01L21/2236H01L21/32134H01L21/32139H01L21/383H01L21/47635H01L27/1214H01L29/401H01L29/42384H01L29/66757H01L29/78633
Inventor 苏同上王东方王庆贺刘宁黄勇潮季雨王政闫梁臣
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD