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Thin-film transistor and manufacturing method thereof, array substrate and display device

A thin-film transistor and substrate technology, which is applied in the direction of transistor, semiconductor/solid-state device manufacturing, electric solid-state device, etc., can solve problems such as shortening channel length, affecting the stability of thin-film transistors, and negative drift of threshold voltage of thin-film transistors

Active Publication Date: 2019-06-21
HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the existing manufacturing method of the top-gate thin film transistor, the length of the channel of the transistor will be significantly shortened, resulting in the short channel effect
The short channel effect will cause the threshold voltage of the thin film transistor to drift negatively, affect the stability of the thin film transistor, and then affect the display quality

Method used

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  • Thin-film transistor and manufacturing method thereof, array substrate and display device
  • Thin-film transistor and manufacturing method thereof, array substrate and display device
  • Thin-film transistor and manufacturing method thereof, array substrate and display device

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Embodiment Construction

[0054] The technical solutions of the present invention will be further specifically described below through the embodiments and in conjunction with the accompanying drawings. In the specification, the same or similar reference numerals designate the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention, and should not be construed as a limitation of the present invention.

[0055] In addition, in the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a comprehensive understanding of the embodiments of the present disclosure. It may be evident, however, that one or more embodiments may be practiced without these specific details.

[0056] It will be understood that, although the terms first, second, etc. may be used herein to describe various e...

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Abstract

The invention provides a thin-film transistor and a manufacturing method thereof, an array substrate and a display device. The thin-film transistor is formed on the substrate, and comprises an activelayer arranged on the substrate, wherein the active layer comprises a source area, a drain area, and a channel area located between the source area and the drain area; a first grid arranged at one side, far away from the substrate, of the active layer; and a second grid arranged at one side, far away from the substrate, of the first grid, wherein the thickness of the first grid is less than that of the second grid.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a thin film transistor and a manufacturing method thereof, an array substrate including the thin film transistor, and a display device. Background technique [0002] Thin film transistors (TFTs) are used as switching devices and driving devices in display devices such as liquid crystal display devices (LCD) and organic light emitting display devices (OLED). The performance of thin film transistors is affected by the material and state of the channel through which charge carriers travel. [0003] Top Gate TFT has better performance than Bottom Gate TFT, including smaller parasitic capacitance, larger on-state current, smaller sub-threshold swing and Due to its higher stability and other advantages, the top-gate thin film transistor has been more and more widely used. However, in the existing manufacturing method of the top-gate thin film transistor, the length of ...

Claims

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Application Information

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IPC IPC(8): H01L29/786H01L21/336H01L29/423H01L27/32G02F1/1368
CPCG02F1/1368H01L29/66969H01L29/24H01L29/78696H01L29/4908H01L27/1225H01L21/2236H01L21/32134H01L21/32139H01L21/383H01L21/47635H01L27/1214H01L29/401H01L29/42384H01L29/66757H01L29/78633
Inventor 苏同上王东方王庆贺刘宁黄勇潮季雨王政闫梁臣
Owner HEFEI XINSHENG OPTOELECTRONICS TECH CO LTD