Information electronic storage unit and/or electronic spin generator
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A technology of electron spin and storage unit, applied in the field of spintronics
Pending Publication Date: 2019-06-25
王德龙
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Embodiment 1
[0094] Embodiment 1, an information electronic storage unit described in the present invention is referred to as a storage unit in the following description,
[0095] Described storage unit, its structure is:
[0096] On one surface of the electron spin state silicon substrate memory 10, there is an electron 1, an electron spin state operation and / or information reading machine 2, a word drive line, and two MOS field effect transistors ——MOS1, MOS2, there is a 0.1 micron thick metal iron layer on the other surface of the electronic spin state silicon substrate memory 10,
[0097] The two terminals of the electron spin state operation and / or information reading machine 2 are respectively electrically connected to the sources s of the two MOS field effect transistors MOS1 and MOS2,
[0098] The drains d of the two MOS field effect transistors MOS1 and MOS2 are respectively connected to the bit line D and / or respectively electrically connected,
[0099] The gates g of the two...
Embodiment 2
[0128] Embodiment 2, an electron spin generator 9, is characterized in that:
[0129] On one surface of the electron spin state silicon substrate memory 10, there is an electron 1, and there is an electron spin state operation and / or information reader 2, on the surface of the electron spin state silicon substrate memory 10 The other surface has a 0.1 micron thick layer of metallic iron,
[0130] 1) Further,
[0131] The electronic spin state operation and / or information reading machine 2 is a circuit with two terminals C, D with an open circular and / or polygonal structure, and the two terminals C, D are respectively the one The positive and negative poles of an electron spin generator,
[0132] 2) Further,
[0133] The electrons operate in the spin state of the electrons and / or the inner center of the open circular and / or polygonal structure surrounded by the lines of the open circular and / or polygonal structure of the information reader 2,
[0134] 3) Further, there is a...
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Abstract
The invention discloses an information electronic storage unit and/or an electronic spin generator, and belongs to the field of information storage and generators. According to the scheme, the methodcomprises the following steps that: on one of the surfaces of the electron spin state silicon substrate memory, there is an electron, an electronic spin state operation and/or information reader, a word drive line, two triodes and/or two MOS FET and or two giant magnetoresistances, and or alternatively an electronic receiver, and on the other surface of the electron spin state silicon substrate memory, there is a ferromagnetic substance layer. According to the technology, the main storage chip can have the advantages of being high in information access speed, large in unit area information capacity, low in energy consumption and small in heat productivity; Two binding posts of the electronic state operation and/or information reading machine are respectively the positive electrode and thenegative electrode of the electronic spin generator, and the electronic spin generator can be formed by the two binding posts and electrons and is used for an information storage device used for a plurality of types of electronic equipment and/or used for a power supply used for the plurality of types of electronic equipment.
Description
technical field [0001] The invention belongs to the field of spin electronics, computer data information storage, and / or generator field, and specifically belongs to an information electronic storage unit, and / or an electronic spin generator. Background technique [0002] "Global Expo", January 2011, Issue No. 43, "Electrons Shake Like a Compass" reported: According to a recent report in the American "New Scientist" magazine, electrons sometimes shake like a compass, and the shaking of many electrons can sometimes form A special kind of wave. Japanese researchers have used this feature to successfully transmit current on an insulator that cannot pass current. - This shows that the field lines of the magnetic poles of the spin electrons penetrate the insulator. [0003] "Metal Functional Materials" [Publication Date] 2002-06-20, [Author] Jin Yan, "Spin (Magnetic) Electronic Technology", article report: "'Spin (Magnetic) Electronic Technology', since 1988 giant magnetic Sin...
Claims
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