Unlock instant, AI-driven research and patent intelligence for your innovation.

Grain size detection method

Active Publication Date: 2021-04-23
WUHAN XINXIN SEMICON MFG CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a detection method of grain size, to solve the problem that the detection result lags and is destructive in the existing detection method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Grain size detection method
  • Grain size detection method
  • Grain size detection method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The method for detecting the grain size proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] figure 1 It is a schematic flow chart of the method for detecting the grain size in an embodiment of the present invention, and each step of detecting the grain size in this embodiment will be described in detail below.

[0029] In step S100, a plurality of reference films are provided, and the refractive index and grain size of each reference film are obtained. Specifically, the reference thin film is, for example, a polysilicon thin film or a metal thin fi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a method for detecting the grain size. By collecting the grain size and refractive index of multiple reference films, the corresponding relationship between grain size and refractive index can be established, and then when the grain size of the film to be tested is detected, the refractive index of the film to be tested can be measured. Combined with the corresponding relationship between the grain size and the refractive index, the grain size of the film to be tested can be deduced. It can be seen that based on the detection method provided by the present invention, there is no need to slice the film to be tested, which can avoid damage to the film to be tested, and the detection time of the grain size is short, and the quality of the film to be tested can be fed back in time.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for detecting the grain size. Background technique [0002] Thin film growth is essential in semiconductor manufacturing processes. And, in the actual product production process, after the film is grown, the film needs to be inspected to judge the quality of the grown film, which usually includes measuring the thickness and sheet resistance of the film. In addition, for crystal thin films, the "grain size" of the thin films is also an important indicator of the quality of the crystal thin films. For example, taking a polysilicon film as an example, it is often used as a gate of a CMOS device, so the grain size of the polysilicon film constituting the gate will directly affect the performance of the finally formed CMOS device. [0003] At present, when detecting the grain size of a thin film, the thin film is usually sliced, and then the grain size of the thin fi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66
Inventor 谢峰
Owner WUHAN XINXIN SEMICON MFG CO LTD
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com