A p-type field effect transistor based on tungsten oxide and its preparation method

Abstract

The invention relates to a P-type field effect transistor based on tungsten oxide and its preparation method. A solid electrolyte is used as a substrate, a mask plate is placed on the solid electrolyte substrate, and a device channel is reserved; then a layer of insulating film is deposited ; Then remove the mask plate, deposit tungsten trioxide thin film; then re-place the mask plate, evaporate the source and drain electrodes; finally evaporate and deposit the gate electrode on the back of the solid electrolyte to form a field effect device. In the present invention, tungsten trioxide is used as the active layer in the transistor, and Au is used as the source and drain electrodes. The device is prepared by vacuum thermal evaporation, and the process is simple. At the same time, the solid electrolyte is used as the gate medium. Coupling characteristics, when the gate electrode is far away from the channel region, it can still have a strong control effect on the conductivity of the channel, reducing the alignment requirements in the device manufacturing process, and obtaining a transistor that exhibits a P-type field effect modulation effect.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to a tungsten oxide-based P-type field effect transistor and a preparation method thereof. Background technique [0002] Metal oxide semiconductor materials have become the main research objects in the field of new flat panel displays due to their high mobility, high visible light transmittance and excellent electrical stability. Among many transition metal oxides, tungsten oxide has been intensively studied. Among them, tungsten trioxide is a wide bandgap semiconductor material with a band gap of 2.4eV to 3.5eV, because of its excellent electron transport properties, photoelectrochemical properties and optical properties. Catalytic properties, etc., especially in thin film form, can be used for advanced technological applications. The dielectric constant of the traditional silicon dioxide insulating layer is too small, so the carrier concentration of the tungsten trioxide film...

AI Technical Summary

Problems solved by technology

However, the stability of ionic liquids is poor and the preparation process is difficult, and device integration cannot be carried out. Therefore, how to prepare tungsten oxide thin film transistors compatible with solid-state electronic devices has become a key obstacle hindering the development of oxide semiconductor devices.

On the other hand, the currently prepared tungsten trioxide-based field effect transistors are all N-type, and making a complete semiconductor circuit requires N-type and P-type field-effect devices, but the P-type field-effect devices based on tungsten oxide have not yet been realized.

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