Unlock instant, AI-driven research and patent intelligence for your innovation.

Sputtering film forming apparatus and a sputtering film forming method

A film-forming device and film-forming method are applied in sputtering plating, ion implantation plating, metal material coating processes, etc. to achieve the effect of uniform film thickness

Pending Publication Date: 2019-07-02
CANON TOKKI CORP
View PDF6 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, in the sputtering film forming apparatus of Patent Document 1, although two rotating cathodes are disclosed, the target is the same, and only one layer of film formation can be performed. In the case of forming a two-layer structure, the target needs to be changed. , performed in other chambers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Sputtering film forming apparatus and a sputtering film forming method
  • Sputtering film forming apparatus and a sputtering film forming method
  • Sputtering film forming apparatus and a sputtering film forming method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0043] Hereinafter, the present invention will be described in detail based on the illustrated embodiments. However, the following embodiments are illustrative of preferred configurations of the present invention, and the scope of the present invention is not limited to these configurations. In addition, in the following description, unless otherwise specified, the manufacturing conditions, dimensions, materials, shapes, etc. of the device, the scope of the present invention is not limited to these descriptions.

[0044] First, refer to figure 1 (A) illustrates the basic structure of the sputtering film forming apparatus of the present invention.

[0045] This sputtering film forming apparatus 1 is used, for example, in the manufacture of an organic EL panel. In the case of organic EL panels, such as Figure 11 As shown, films are generally formed on the substrate in the order of anode, hole injection layer, hole transport layer, organic light-emitting layer (organic film),...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a sputtering film forming apparatus and a sputtering film forming method, which can form a laminated film of a two-layer structure without separating different chambersand can form a film with a uniform film thickness. A pair of target units is arranged side by side at predetermined intervals in a direction in which the target units move relative to a substrate to be processed. The power source is a bipolar power source capable of outputting a voltage waveform having opposite polarities to the pair of target units. During the period of forming a film on the processed substrate, at least a negative waveform portion is applied to an electrode member of one of the target units to enable to the electrode member to function as a cathode; and a positive waveform portion is applied to an electrode member of the other target unit and the negative waveform portion is blocked to enable the electrode member to function as an anode.

Description

technical field [0001] The present invention relates to a sputtering film-forming device, and particularly relates to magnetron-type sputtering film-forming in which a magnet is arranged on the back side of a target, and a ring-shaped magnetic flux is formed near the surface of the target to trap electrons and concentrate plasma. Device and sputtering film formation method. Background technique [0002] As such a conventional sputtering film-forming apparatus, for example, a sputtering film-forming apparatus as described in Patent Document 1 is known. [0003] That is, it includes: a pair of rotating cathodes (target units) arranged to face the base material (substrate to be processed); and a sputtering power supply that supplies sputtering power to each of the rotating cathodes. The rotating cathode includes: a cylindrical base member; a cylindrical target covering the outer periphery of the base member; and a magnet unit arranged inside the base member to form a magnetic ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/54
CPCC23C14/352C23C14/54
Inventor 渡部新竹见崇
Owner CANON TOKKI CORP