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Data writing method and device for three-dimensional flash memory and readable storage medium

A data writing, three-dimensional technology, applied in the input/output process of data processing, electrical digital data processing, input/output to the record carrier, etc., can solve the problems of high complexity and limited stability, and achieve low complexity , The effect of application stability is guaranteed

Active Publication Date: 2019-07-12
SHENZHEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the embodiments of the present invention is to provide a data writing method, device, and readable storage medium for a three-dimensional flash memory, which can at least solve the problem of complex implementation of the solution when using circuit-level technology to improve the reliability of the three-dimensional flash memory in the related art. High, the stability of the application is relatively limited

Method used

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  • Data writing method and device for three-dimensional flash memory and readable storage medium
  • Data writing method and device for three-dimensional flash memory and readable storage medium
  • Data writing method and device for three-dimensional flash memory and readable storage medium

Examples

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no. 1 example

[0029] In order to solve the technical problems of high complexity of solution implementation and relatively limited application stability when using circuit-level technology to improve the reliability of 3D flash memory in related technologies, this embodiment proposes a data writing method for 3D flash memory. Applied to three-dimensional flash memory, three-dimensional flash memory adopts a multi-layer three-dimensional structure, and each plane layer is stacked together, each layer has several rows, and each row has several physical blocks. like figure 1 Shown is the basic flowchart of the data writing method of the three-dimensional flash memory provided in this embodiment. The data writing method of the three-dimensional flash memory proposed in this embodiment includes the following steps:

[0030] Step 101. When writing data into the three-dimensional flash memory, allocate a target physical block corresponding to a logical block of data to be written on the three-dime...

no. 2 example

[0059] In order to solve the technical problems of relatively high complexity and limited application stability in the related art when circuit-level technology is used to improve the reliability of 3D flash memory, this embodiment shows a data writing device for 3D flash memory. For details, please refer to image 3 , the data writing device of this embodiment includes:

[0060] An allocation module 301, configured to allocate a target physical block corresponding to a logical block of data to be written on the three-dimensional flash memory when writing data to the three-dimensional flash memory;

[0061] The judging module 302 is configured to sense the temperature of the target physical block, and judge whether the preset data writing condition is satisfied according to the temperature sensing information of the target physical block;

[0062] The first writing module 303 is configured to write the data to be written into the target physical block when the data writing co...

no. 3 example

[0074] This embodiment provides an electronic device, see Figure 5 As shown, it includes a processor 501, a memory 502 and a communication bus 503, wherein: the communication bus 503 is used to realize connection and communication between the processor 501 and the memory 502; the processor 501 is used to execute one or more programs stored in the memory 502 A computer program to realize at least one step in the data writing method of the three-dimensional flash memory in the first embodiment above.

[0075] The present embodiment also provides a computer-readable storage medium, which includes information implemented in any method or technology for storing information, such as computer-readable instructions, data structures, computer program modules, or other data. volatile or nonvolatile, removable or non-removable media. Computer-readable storage media include but are not limited to RAM (Random Access Memory, random access memory), ROM (Read-Only Memory, read-only memory),...

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Abstract

The embodiment of the invention discloses a data writing method and device of a three-dimensional flash memory and a readable storage medium. The method includes: when data is written into the three-dimensional flash memory, distributing a target physical block corresponding to a logic block of to-be-written data on the three-dimensional flash memory; performing temperature sensing on the target physical block, and judging whether a preset data writing condition is met or not according to the temperature sensing information of the target physical block; if yes, writing the to-be-written data into the target physical block; and if not, searching a new physical block meeting the data writing condition on the three-dimensional flash memory, and writing the to-be-written data into the new physical block. Through the implementation of the method, the temperature sensing of the physical block is realized in the equipment driving layer by adopting a software / hardware collaborative design thought, and then the data is controlled to be written into the appropriate physical block based on the temperature sensing result, so that the process design of the three-dimensional flash memory does not need to be changed, the complexity of scheme implementation is relatively low, and the application stability is also relatively guaranteed.

Description

technical field [0001] The invention relates to the field of data storage, in particular to a data writing method, device and readable storage medium of a three-dimensional flash memory. Background technique [0002] As the latest generation of flash memory technology, three-dimensional flash memory achieves rapid growth in storage capacity by stacking flash memory in three dimensions, and can obtain storage capacity several times that of traditional chips. Due to the high storage capacity of 3D flash memory, it is favored by users in more and more industries. [0003] However, in the management of the existing 3D flash memory, the system will perform frequent read and write operations on a specific logical address, so that the local temperature of the physical address corresponding to the logical address on the 3D flash memory will continue to rise, resulting in the reliability of the flash memory. Decrease, the bit error rate of the data increases significantly. At prese...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0614G06F3/0638G06F3/0679
Inventor 王毅黄江帆林观泉陈炜轩周池廖好毛睿
Owner SHENZHEN UNIV
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