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Short Inorganic Trisilylaminopolysilazanes for Thin Film Deposition

A technology of dialkylamino and atomic layer deposition, applied in organic chemistry, compounds of group 4/14 elements of the periodic table, coatings, etc. question

Active Publication Date: 2021-12-07
LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] Furthermore, silanes with alkoxy groups rarely exhibit proper self-limited growth by atomic layer deposition and do not allow the formation of silicon nitride films, since oxygen is usually retained in the films, and are thus inferior in possible thin film deposition applications to Aminosilanes with Si-N bonds are universal

Method used

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  • Short Inorganic Trisilylaminopolysilazanes for Thin Film Deposition
  • Short Inorganic Trisilylaminopolysilazanes for Thin Film Deposition

Examples

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[0231] The following examples illustrate experiments performed in conjunction with the disclosure herein. This example is not intended to be all-inclusive and is not intended to limit the scope of the disclosures described herein.

[0232] In the glove box, 0.35g (2.7mmol) of (H 3 Si) 2 -N-SiH 2 Cl(TSA-Cl)* was mixed with 0.39 g of pentane. This mixture was added to 0.1 g (2.4 mmol) cyanamide (H 2 N-CN). A white precipitate appeared immediately. The solution was filtered twice. Both times the initially clear filtrate became cloudy.

[0233] The inferred reaction is 2(SiH 3 ) 2 NSiH 2 -Cl+4H 2 N-CN→[(SiH 3 ) 2 NSiH 2 ] 2 -NCN+2H 2 N-CN*HCl

[0234] Gas chromatography (GC) analysis indicated the presence of monochlorosilane, diethyl ether and pentane, unreacted TSA-Cl, (SiH 3 ) 2 NSiH 2- N-C≡N-SiH 3 , or [(SiH 3 ) 2 NSiH 2 ] 2 -N-C≡N(TSA 2 - cyanamide). There are many other smaller, unidentified peaks. The GC spectrum of the mixture is shown in figur...

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Abstract

Si-C-free and volatile silazane precursors for high-purity thin film deposition are disclosed.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of U.S. Application No. 15 / 661,576, filed July 27, 2017, and U.S. Provisional Application No. 62 / 432,666, filed December 11, 2016, both of which are incorporated by reference in their entirety for all purposes The content is incorporated here. technical field [0003] Si-containing film-forming compositions are disclosed that include Si-C-free and volatile silazane-containing precursors. These compositions are useful for depositing high purity thin films. Background technique [0004] As semiconductor devices scale down, new materials are required. Common materials, such as silicon nitride or silicon oxide, need to be deposited under increasingly stringent conditions. For example, the general trend in silicon nitride deposition is to perform chemical vapor deposition (CVD) or atomic layer deposition (ALD) at the lowest possible temperature while maintaining high deposition rates a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34H01L21/316H01L21/318
CPCC07F7/10C23C16/345C23C16/402H01L21/02222H01L21/02164H01L21/0217H01L21/02274H01L21/0228C23C16/45553H01L21/02211
Inventor 安东尼奥·桑切斯根纳迪·伊多里诺·佩萨雷西让-马克·吉拉尔张鹏马尼什·坎德尔沃
Owner LAIR LIQUIDE SA POUR LETUDE & LEXPLOITATION DES PROCEDES GEORGES CLAUDE