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Crystal carrying frame mixed crystal removing device and method in KDP crystalloid growth process

A technology of crystal growth and growth process, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve problems affecting crystal growth, consumption, miscellaneous crystals, etc., and achieve the effect of improving the success rate

Active Publication Date: 2019-07-26
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During such a long growth period, the solution in the KDP-type crystal growth tank is supersaturated, and the crystal carrier is always in the forward-reverse rotation state, and it is easy to cause impurities in the solution due to spontaneous nucleation. crystal production
These miscellaneous crystals are easily attached to the crystal carrier and grow with the growth of the crystal, so that the solute in the solution is excessively consumed, thereby affecting the growth of the normal crystal
Therefore, once the miscellaneous crystals on the crystal carrier are produced, the crystal growth will be interrupted, which seriously affects the success rate of KDP crystal growth.

Method used

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  • Crystal carrying frame mixed crystal removing device and method in KDP crystalloid growth process
  • Crystal carrying frame mixed crystal removing device and method in KDP crystalloid growth process

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Embodiment

[0025] See figure 1 , as can be seen from the figure, the device for eliminating miscellaneous crystals on the crystal carrier during the KDP crystal growth process of the present invention includes a crystal growth tank 3 and a crystal carrier 1 located inside the crystal growth tank 3, and the crystal carrier 1 passes through The connecting rod 4 of the crystal carrier is connected with the rotary motor 7 positioned outside the crystal growth tank 3, and the side wall of the crystal growth tank 3 is provided with an observation window 12, and an encoder 6 is installed on the connecting rod 4 of the crystal carrier. A camera 11 is installed on the outside of the observation window 12, the encoder 6 and the camera 11 are connected with the computer 9 for communication, a conductive slip ring 5 is set on the connecting rod 4 of the crystal carrier, and the crystal carrier 1 A plurality of heating chips 13 are arranged inside the lower tray, and the position information of each ...

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Abstract

The invention discloses a crystal carrying frame mixed crystal removing device and method in a KDP crystalloid growth process. When a mixed crystal is formed on a crystal carrying frame, the positionof the mixed crystal is identified by a computer image, and an instruction is automatically transmitted to inform a controller to control a heating piece below the position of the mixed crystal to heat the mixed crystal, so that local high temperature is formed in the area of the mixed crystal until the mixed crystal is completely removed. The mixed crystal on the crystal carrying frame can be dissolved without affecting normal growth of the crystal, and the success rate of KDP crystalloid growth is increased.

Description

technical field [0001] The invention relates to KDP crystals, in particular to a device and method for eliminating miscellaneous crystals on a crystal carrier during the growth of KDP crystals, aiming at eliminating the miscellaneous crystals on the crystal carrier without affecting the normal growth of KDP crystals and improving KDP The success rate of crystal-like growth. Background technique [0002] At present, inertial confinement fusion (ICF) devices in various countries require a large number of high-quality, large-diameter KDP crystals; among them, KDP crystals are used as optical switches and frequency-doubling components, and DKDP crystals are used as frequency-tripling components. The growth of KDP crystals mainly adopts the traditional growth method and the rapid growth method of point seed crystal. In order to obtain a large-diameter KDP-like crystal element that can meet the needs of ICF devices, the traditional growth method takes one to two years, and even t...

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Application Information

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IPC IPC(8): C30B7/00C30B29/14
CPCC30B7/00C30B29/14
Inventor 齐红基陈端阳邵建达王斌范永涛
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI