NAND flash memory reading method and system, electronic equipment and storage medium
A flash memory and storage unit technology, applied in the computer field, can solve the problems of reduced reliability, reduced reliability of NAND flash memory, and susceptibility to interference of NAND flash memory, and achieve the effect of reducing data error rate and improving reliability
Pending Publication Date: 2019-07-26
GUANGDONG UNIV OF TECH
View PDF3 Cites 5 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, during the development of NAND flash memory, with the continuous improvement of manufacturing process and the continuous increase of storage density, the number of electrons contained in the state representing data in the storage unit becomes smaller, and the interference between cells becomes more obvious, making NAND flash memory more and more Increased susceptibility to interference and reduced reliability
[0006] Therefore, how to solve the problem of reduced reliability of NAND flash memory is what those skilled in the art need to focus on
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0066] The following will clearly and completely describe the technical solutions in the embodiments of the application with reference to the drawings in the embodiments of the application. Apparently, the described embodiments are only some of the embodiments of the application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of this application.
[0067] In the development process of NAND flash memory, with the continuous improvement of manufacturing process and the continuous increase of storage density, the number of electrons contained in the state representing data in the storage unit becomes smaller, and the interference between cells becomes more obvious, making NAND flash memory more and more become more susceptible to interference and less reliable.
[0068] The embodiment of the present application discloses a method for rea...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses an NAND flash memory reading method and system, electronic equipment and a computer readable storage medium. The method comprises the following steps: receiving a reading command for reading NAND flash memory data; carrying out detection judgment on the NAND flash memory data, obtaining initial data of the NAND flash memory based on a judgment result, and decoding the initial data; if the decoding is successful, outputting decoded data; and if the decoding fails, performing error correction on the initial data by using a neural network obtained by pre-training to obtainerror-corrected data, and outputting the decoded data after the error-corrected data is successfully decoded. Namely, when the data of the NAND flash memory is read, if the decoding operation on theinitial data fails, error correction is performed on the initial data by utilizing the pre-trained neural network, so that the data error rate is effectively reduced, and the reliability of the NAND flash memory is improved.
Description
technical field [0001] The present application relates to the field of computer technology, and more specifically, to a method and system for reading a NAND flash memory, an electronic device, and a computer-readable storage medium. Background technique [0002] With the development and application of the Internet of Things, cloud computing, and big data, data storage, as an important information carrier, has higher and higher requirements for its reliability. Traditional hard disk storage (Hard Disk Device, HDD) gradually cannot meet the demand for fast reading and writing and storage capacity of data storage. In recent years, tremendous changes have taken place in the storage industry. Data storage devices using NAND flash memory as the medium have gradually replaced HDDs and become the main storage medium now and even in the future. [0003] NAND flash memory is mainly composed of physical circuits, sense amplifiers, silicon chip pins and storage arrays. figure 1 Its pl...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): G06F11/10
CPCG06F11/1068
Inventor 韩国军何瑞泉彭子帅蔡国发方毅
Owner GUANGDONG UNIV OF TECH