Carbon nanotube module, semiconductor device and manufacturing method
A technology of carbon nanotubes and manufacturing methods, applied in the field of semiconductor devices and their manufacturing, and carbon nanotube modules, can solve problems such as high cost and complicated manufacturing process, achieve improved yield, reduce manufacturing process deviation, and save interval technology Effect
Active Publication Date: 2021-03-26
SEMICON MFG INT TIANJIN +1
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Problems solved by technology
[0003] However, the manufacturing process of the module where the carbon nanotubes in the current non-volatile memory is complicated and the cost is high
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[0059] Please refer to figure 1 , each storage unit of the memory based on carbon nanotubes is mainly formed by a lower electrode 103, an upper electrode 108, and a carbon nanotube 104 between the upper electrode 108 and the lower electrode 103, and the lower electrode 103 is in electrical contact with the third layer of metal interconnection lines (M3) 101, the upper electrode 108 electrically contacts the fourth layer metal interconnection line (M4) 109. The operating principle of the memory based on carbon nanotubes is that when the driving transistor (not shown, the driving transistor is located below M3, and passes through the first layer metal interconnection M1, the second layer metal interconnection M2 and the interconnection line When a voltage is applied to the carbon nanotubes 104 and another voltage of opposite polarity is applied to the fourth layer metal interconnection line (M4) 109, the carbon nanotubes 104 bend, The resistance between the carbon nanotube 104 ...
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Abstract
The invention provides a carbon nanotube module, a semiconductor device and a manufacturing method. In the manufacturing method of the carbon nanotube module and the semiconductor device, a through hole is etched in an interlayer dielectric layer, and sequentially in the through hole The lower electrode, carbon nanotubes and upper electrode are stacked to form a carbon nanotube module. In essence, an in-situ self-alignment process for the manufacture of carbon nanotube modules is realized by means of the through holes in the interlayer dielectric layer, providing better The process window saves multiple chemical mechanical planarization processes and carbon nanotube spacing processes, simplifies the process flow, and provides a flatter process surface for the manufacture of subsequent film layers, which can greatly increase the yield and reduce the manufacturing cost. cost. In the carbon nanotube module and semiconductor device of the present invention, the lower electrode, the carbon nanotube and the upper electrode of the carbon nanotube module are sequentially stacked in the through hole of the interlayer dielectric layer, which can reduce the deviation of simplified process flow and process, and improve Device Yield and Performance.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a carbon nanotube module, a semiconductor device and a manufacturing method thereof. Background technique [0002] The development and increasing popularity of electronics has spurred the development of memories for information storage that are non-volatile and retain information even when the power is turned off. With the further development of electronic products and the continuous improvement of integrated circuit manufacturing technology, the research and development and manufacturing of memory are also developing towards low manufacturing cost, high storage density, low power consumption and high operating speed. In order to solve the problems encountered in the process of memory development Difficult, based on carbon nanotube (CNT) nonvolatile memory (nonvolatile memory, NVM) applications, which have significant electrical properties such as low cur...
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IPC IPC(8): H01L51/05H01L51/30H01L27/28H10B69/00
CPCH10B69/00
Inventor 王新鹏任惠魏德义
Owner SEMICON MFG INT TIANJIN