Carbon nanotube module, semiconductor device and manufacturing method
A technology of carbon nanotubes and a manufacturing method, applied in the field of semiconductor devices and their manufacturing, and carbon nanotube modules, can solve the problems of high cost and complicated manufacturing process, and achieves improving yield, reducing manufacturing process deviation, and saving interval processes. Effect
Active Publication Date: 2019-08-02
SEMICON MFG INT TIANJIN +1
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Problems solved by technology
[0003] However, the manufacturing process of the module where the carbon nanotubes in the current non-volatile memory is complicated and the cost is high
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[0059] Please refer to figure 1 , each storage unit of the memory based on carbon nanotubes is mainly formed by the lower electrode 103, the upper electrode 107 and the carbon nanotube 104 between the upper electrode 108 and the lower electrode 103, and the lower electrode 103 is in electrical contact with the third layer metal interconnection line ( M3 ) 101 , the upper electrode 108 electrically contacts the fourth layer metal interconnection line ( M4 ) 109 . The operating principle of the memory based on carbon nanotubes is that when the driving transistor (not shown, the driving transistor is located below M3, and passes through the first layer of metal interconnection M1, the second layer of metal interconnection M2 and the interconnection line When a voltage is applied to the carbon nanotubes 104 and another voltage of opposite polarity is applied to the fourth layer metal interconnection line (M4) 109, the carbon nanotubes 104 bend, The resistance between the carbon n...
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The invention provides a carbon nanotube module, a semiconductor device and a manufacturing method. The carbon nanotube module manufacturing method is characterized in that a through hole is etched inan interlayer dielectric layer, a lower electrode, a carbon nanotube and an upper electrode are sequentially stacked in the through hole to form a carbon nanotube module, the in-situ self-alignment process flow for the carbon nanotube module fabrication is realized substantially by means of the through hole of the interlayer dielectric layer, the better process window is provided, many chemical mechanical planarization processes and spacer processes of carbon nanotubes are omitted, the process flow is simplified, the flatter process surface is provided for the subsequent fabrication of the film, and thereby the yield can be greatly improved, and manufacturing cost can be reduced. The carbon nanotube module manufacturing method is advantaged in that the lower electrode, the carbon nanotubeand the upper electrode are sequentially stacked in the through hole of the interlayer dielectric layer, the process flow and process deviation are reduced, and the device yield and performance are improved.
Description
technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a carbon nanotube module, a semiconductor device and a manufacturing method thereof. Background technique [0002] The development and increasing popularity of electronics has spurred the development of memories for information storage that are non-volatile and retain information even when the power is turned off. With the further development of electronic products and the continuous improvement of integrated circuit manufacturing technology, the research and development and manufacturing of memory are also developing towards low manufacturing cost, high storage density, low power consumption and high operating speed. In order to solve the problems encountered in the process of memory development Difficult, based on carbon nanotube (CNT) nonvolatile memory (nonvolatile memory, NVM) applications, which have significant electrical properties such as low cur...
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Login to View More IPC IPC(8): H01L27/115
CPCH10B69/00
Inventor 王新鹏任惠魏德义
Owner SEMICON MFG INT TIANJIN