Crystal edge etching method and semiconductor device manufacturing method

Abstract

The invention provides a crystal edge etching method and a semiconductor device manufacturing method. In the crystal edge etching method, the crystal edge area of ​​the film layer to be crystal edge etched on the wafer is performed multiple times by rotating the wafer. Dry etching, so that the uniformity of the crystal edge of the film layer meets the requirements, avoiding the wafer warping problem caused by the non-uniformity of the crystal edge, and then wet cleaning the crystal edge area of ​​the film layer, which can Further remove the asymmetry and residual defects of the film layer caused by the dry etching, thereby better improving the defects, breakdown and excessive stress caused by the film layer at the edge of the wafer, and improving the quality of the final semiconductor device. Yield rate; further, when there is the upper film layer to be etched at the edge of the crystal and the lower film layer to be etched at the edge of the wafer on the front side of the wafer, the superposition of the dry etching and the wet etching The effect can make the crystal edge regions of the etched upper film layer and the lower film layer symmetrical with respect to the wafer.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing, in particular to a crystal edge etching method and a semiconductor device manufacturing method. Background technique [0002] With the development of semiconductor technology, the size of semiconductor devices continues to shrink, and the corresponding technology nodes continue to increase. Wafer bevel has an increasing impact on the process, such as double exposure of CMOS devices at 10nm and higher technology nodes In (SaDP) and quadruple exposure (SaQP) processes, the crystal edge is one of the important factors affecting the effect of photolithographic pattern transfer. Bevel etch technology is more and more popular in the semiconductor manufacturing industry because it can improve defects (Defect), breakdown (Arcing) and excessive stress (Excessive stress) and improve the yield of semiconductor devices manufactured. Pay attention to. However, if the edge etching is...

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Problems solved by technology

However, if the edge etching is not performed well, especially when the non-uniformity caused by the edge cannot be strictly controlled during the edge etching process, it will cause the problem of wafer warpage, and then the improvement cannot be achieved. The effects of defects, breakdown, and excessive stress, so the effect of improving the yield of semiconductor devices is often not ideal

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