A kind of manufacturing method and electronic product of 3D flash memory chip

Abstract

The present invention relates to the technical field of semiconductor memory manufacturing, in particular to a method for manufacturing a 3D flash memory chip and an electronic product, including step S1, providing a 3D flash memory chip, the 3D flash memory chip includes a substrate, and a plurality of flash memory strings are formed on the substrate , and each flash memory string includes a plurality of memory cells; an electronic channel is formed in each flash memory string, and a first tunnel oxide layer or a second tunnel oxide layer is formed between the electronic channel and the storage medium of the memory cell; Step S2, transfer and back up the data stored in the storage unit using the second tunnel oxide layer to the storage unit using the first tunnel oxide layer or the off-chip storage unit within a preset time; Step S3, after step S2 , and reload data into the memory cells using the second tunnel oxide layer. The above technical solution: break the barriers of the traditional 3D flash memory chip manufacturing process, so that the 3D flash memory chip can keep data for a long time without affecting the data read and write speed.

Description

technical field [0001] The invention relates to the technical field of semiconductor memory manufacturing, in particular to a method for manufacturing a 3D flash memory chip and electronic products. Background technique [0002] With the development of semiconductor technology, non-volatile memory such as flash memory can keep data for a long time without current supply, and its storage characteristics are equivalent to hard disks. This feature is why flash memory can become various portable digital devices. The basis of storage media, so the technical requirements for the production of flash memory chips continue to increase. [0003] In the manufacturing process of traditional 3D flash memory chips, silicon is usually used as the electronic channel and substrate. The thickness of the tunnel oxide layer has to be relatively thick due to the need to consider the data retention time to prevent leakage of electrons. Therefore, in terms of maintaining data time and data readin...

AI Technical Summary

Problems solved by technology

[0003] In the manufacturing process of traditional 3D flash memory chips, silicon is usually used as the electronic channel and substrate. The thickness of the tunnel oxide layer has to be relatively thick due to the need to consider the data retention time to prevent leakage of electrons. The thicker tunnel oxide layer will affect the reading and writing speed of the 3D flash memory chip. Therefore, in terms of maintaining data time and data reading and writing speed, traditional flash memory chip manufacturing technology cannot guarantee the perfect combination of both functions.

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