Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method

A solid electrolyte and thin film technology, applied in the field of microelectronic materials, can solve the problems of poor reliability, inability to achieve fast reading and writing, and not yet widely used

Inactive Publication Date: 2008-07-16
NANJING UNIV
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The currently used non-volatile memory magnetic media storage cannot achieve fast reading and writing due to the mechanical relative movement of the magnetic head and the recording medium during the reading and writing process.
The storage speed of electronic storage technologies such as Flash is better than that of magnetic media storage, but its reliability is poor in harsh environments
In addition, there are ferroelectric memory (FeRAM) under research, M-RAM based on spintronic materials, etc., which have not yet been widely used due to some of their weaknesses

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method
  • Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method
  • Electrolyte thin film (AgI)x(AgPO3)1-x based on amorphous solid and its preparing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Embodiment 1. Preparation of amorphous solid electrolyte film (AgI) 0.5 (AgPO 3 ) 0.5 , where AgI and AgPO 3 The molar ratio of the substances is 1:1;

Embodiment 2

[0040] Embodiment 2. Amorphous solid electrolyte film (AgI) 0.5 (AgPO 3 ) 0.5 The preparation method, its preparation steps are as follows:

[0041] a) (AgI) 0.5 (AgPO 3 ) 0.5 Glass target 4 is made of AgI, AgNO 3 , (NH 4 ) 2 HPO 4 Prepared by powder smelting; the stoichiometric ratio of the above powders (33.3mol%AgI, 33.3mol%AgNO 3 and 33.3mol% (NH 4 ) 2 HPO 4 ) mixture; pour the melt into the copper mold, cool and solidify to form (AgI) 0.5 (AgPO 3 ) 0.5 Glass target 4;

[0042] b) Will (AgI) 0.5 (AgPO 3 ) 0.5 The glass target 4 is fixed in the pulse laser deposition film forming system (such as figure 1 shown), the substrate 1 is fixed on the substrate table 8, and they are all placed in the growth chamber 6 of the pulsed laser deposition film-making system;

[0043] c) Use a vacuum pump to evacuate the growth chamber 6 to 1.0×10 through the interface valve 7 of the mechanical pump and the molecular pump -3 Below Pa;

[0044] d) Use KrF excimer laser...

Embodiment 3

[0046] Example 3. Using an amorphous solid electrolyte (AgI) 0.5 (AgPO 3 ) 0.5 The preparation method of the non-volatile phase-change memory element, its preparation steps are as follows:

[0047] 1) deposit non-reactive electrode film 10 with magnetron sputtering method on silicon wafer substrate 9, its material is platinum, and the thickness of non-reactive electrode film 10 is 200 nanometers;

[0048] 2) Utilize the radio frequency magnetron sputtering method to deposit a layer of insulating layer 11 on the non-reactive electrode film 10, the material of the insulating layer is silicon dioxide, and its thickness is 150 nanometers;

[0049] 3) Cover the substrate with a metal mask plate engraved with holes with a diameter of 0.4 mm, and process micro-holes with a diameter of 1000 nanometers in the insulating layer 11 by using the focused particle beam etching method to expose the lower non-reactive electrode film 10;

[0050] 4) Put the substrate covered with the mask i...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a novel memory material - an amorphous solid electrolyte membrane (AgI) x (AgPO3)1-x, which is utilized to prepare a nonvolatile memorizer and can be used for an integrated circuit like information storage and other varieties. The amorphous solid electrolyte membrane (AgI) x (AgPO3)1-x of the invention is characterized in that: the (AgI) x (AgPO3)1-x is a solid electrolyte membrane material, has ionic conductivity, can be reversibly converted into electronic conductivity under certain conditions and takes the structure of an amorphous material under room temperature, and the nonvolatile memorizer with small size, high density and stable performance can be prepared by utilization of the membrane. The invention provides a preparation method for the amorphous solid electrolyte membrane (AgI) x (AgPO3)1-x, comprising the following steps: AgI, AgNO3 and (NH4)2HPO4 with adequate mixture ratio are melted and then fabricated into glass target materials, and then the amorphous solid electrolyte membrane is prepared by utilization of a laser pulse sedimentation method.

Description

1. Technical field [0001] The invention belongs to the field of microelectronic materials, and in particular relates to an amorphous solid electrolyte film (AgI) used in the preparation of high-density non-volatile phase-change memory elements that can be read and written quickly x (AgPO 3 ) 1-x and its preparation method. 2. Background technology [0002] The two basic systems that make up a computer are the storage system and the processing system. Currently used memory systems include volatile memory and non-volatile memory. The former is mostly used in the internal memory of the computer system, and cannot save data when there is no power support. The latter can completely save the original data when there is no power support, so it is widely used in data storage of electronic systems, such as computers, digital equipment, industrial control equipment, etc. Currently used non-volatile memory magnetic media storage cannot achieve fast reading and writing because the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00C23C14/28G11C11/56
Inventor 殷江国洪轩尹奎波陈亮刘治国
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap