Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Array substrate, display panel and display device

A technology of array substrate and substrate substrate, applied in optics, instruments, electrical components, etc., can solve the problems of poor high temperature resistance of quantum dot materials

Active Publication Date: 2019-08-16
BOE TECH GRP CO LTD
View PDF9 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the poor high temperature resistance of quantum dot materials, there is a compatibility problem in the normal array process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Array substrate, display panel and display device
  • Array substrate, display panel and display device
  • Array substrate, display panel and display device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0031] Please refer to figure 1 , the present invention provides an array substrate, comprising:

[0032] substrate substrate 1;

[0033] A patterned thin film transistor layer disposed on the base substrate 1;

[0034] The first passivation layer 9 disposed on the side of the thin film transistor layer away from the base substrate 1;

[0035] A quantum dot layer 10 disposed on the side of the first passivation layer 9 away from the base subst...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the technical field of display equipment and discloses an array substrate, a display panel and a display device. The array substrate comprises an underlying substrate; and a patterned thin film transistor layer, a first passivation layer, a quantum dot layer, a color filter layer, a flat layer, and a metal wire gate polarizing layer which are sequentially arranged on the underlying substrate, wherein the orthographic projection of the quantum dot layer on the underlying substrate is located within the orthographic projection of the color filter layer on the underlyingsubstrate. According to the array substrate, the quantum dot layer and the metal wire gate polarizing layer are arranged on the underlying substrate, and the thermal influence on the quantum dot layerin the manufacturing process is blocked by the color filter layer so that the backlight utilization ratio is improved by a wavelength conversion method and the display requirement is met.

Description

technical field [0001] The present invention relates to the technical field of display devices, in particular to an array substrate, a display panel and a display device. Background technique [0002] With the development of liquid crystal display products, the transmittance and color gamut of liquid crystal panels have been limited by bottlenecks, and wavelength conversion has to be used to improve the utilization rate of backlight to meet display requirements. [0003] The quantum dot material is an excellent wavelength conversion material. The quantum dot material is made into a photoresist to form a quantum dot film layer with a pixel-level pattern, which can specifically convert the backlight into the color required by the pixel, and greatly improve the backlight utilization. Rate. However, due to the fluorescent properties of quantum dot materials, it will completely destroy the polarization state of light, so it must be used with a built-in polarizer. At present, th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/12
CPCH01L27/1214H01L27/1259G02F1/133548G02F1/133614G02F1/133617G02F2202/36G02F1/13318G02F1/136222G02F1/136209G02F1/1368
Inventor 舒适李翔徐传祥于勇黄海涛岳阳姚琪黄睿石戈郭康
Owner BOE TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com