Method and device for massively preparing silicon nanomaterial

A silicon nanometer and silicon nanowire technology, which is applied in the field of large-scale preparation of silicon nanomaterials, can solve the problems of high temperature and the inability to realize industrialization requirements of large-scale preparation of silicon nanomaterials, so as to save gas costs, increase effective air intake, The effect of reducing manufacturing costs

Pending Publication Date: 2019-08-23
金雪莉
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Problems solved by technology

Its disadvantage is that when silane is ionized in a nitrogen environment, the ionized silicon ions, hydrogen ions and nitrogen ions will also pass through the plasma arc region, and its temperature is as high as 6000°C-18000°C. In this ultra-high temp

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  • Method and device for massively preparing silicon nanomaterial
  • Method and device for massively preparing silicon nanomaterial
  • Method and device for massively preparing silicon nanomaterial

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Embodiment Construction

[0044] Below in conjunction with accompanying drawing, the present invention will be further described with specific embodiment, see Figure 1-3 .

[0045] A device for preparing silicon nanomaterials in large quantities, comprising a plasma gun 2 controlled by a plasma power source 1, the inner cavity of the plasma gun 2 is connected with an inert gas storage tank 3 and a silicon source storage tank 4, and the lower end of the plasma gun 2 is arranged There is a growth controller 5, the lower end of the growth controller 5 is provided with a cooling container 6, and a gas cooling ring 7 is arranged in the cooling container 6, and the cooling container 6 is connected to a gas-solid separator 8 and is provided with an air suction device 9, the The gas outlet of the gas-solid separator 8 is sequentially connected to the heat exchanger 10 and the mixed gas storage tank 11, and the mixed gas storage tank 11 is connected to the gas cooling ring 7 to output the cooled mixed gas.

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Abstract

The invention belongs to the technical field of nanomaterials, and relates to a method for massively preparing a silicon nanomaterial. The method comprises the following steps: a silicon-containing gas and an inert gas are input into a plasma gun, and are ionized and thermally decomposed in the plasma gun to obtain silicon ions and hydrogen ions; the silicon ions and hydrogen ions obtained throughionization and thermal decomposition enter a growth controller to afresh generate silicon nanowires and/or silicon nanoparticles; and the afresh generated silicon nanowires and/or silicon nanoparticles enter a cooling container, and are rapidly cooled and stably molded by a cooling gas released by a cooling gas ring. The invention also provides a device for massively preparing the silicon nanomaterial. The method and the device for massively preparing the silicon nanomaterial realize the industrial preparation of the silicon nanomaterial especially the silicon nanowires, and greatly reduce the manufacturing cost of the material.

Description

technical field [0001] The invention belongs to the technical field of nanometer materials, and relates to a method and a device for preparing silicon nanomaterials in a large amount. Background technique [0002] The Ministry of Industry and Information Technology proposed that by 2020, the energy density of power batteries in my country should reach 300wh / kg, strive to reach 350wh / kg, and target 400wh / kg in 2022. At the same time, the manufacturing cost is less than 1 yuan per watt, so it is necessary for high-capacity lithium-ion battery materials To bring jumping battle, it must have the requirements of high initial Coulombic efficiency, high specific capacity, good cycle performance and low manufacturing cost. [0003] At present, there are still many problems in the application of domestic special crystalline silicon nanometers to lithium-ion battery materials, and at the same time meet the above four-in-one requirements (that is, the four conditions for the industrial ...

Claims

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Application Information

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IPC IPC(8): C01B33/03B82Y30/00B82Y40/00
CPCC01B33/03B82Y30/00B82Y40/00
Inventor 不公告发明人
Owner 金雪莉
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