Vacuum evaporation substrate and vacuum evaporation device

A substrate and evaporation technology, applied in vacuum evaporation plating, sputtering plating, ion implantation plating, etc., can solve the problem that the opening area cannot be accurately aligned, and achieve the effect of ensuring the evaporation effect and improving the degree of sagging

Active Publication Date: 2019-08-27
BOE TECH GRP CO LTD +1
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The embodiment of the present invention provides an evaporation substrate and evaporation equipment, which can solve the problem in the related art that the opening

Method used

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  • Vacuum evaporation substrate and vacuum evaporation device
  • Vacuum evaporation substrate and vacuum evaporation device
  • Vacuum evaporation substrate and vacuum evaporation device

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Embodiment Construction

[0036] In order to make the object, technical solution and advantages of the present invention clearer, the implementation manner of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0037] figure 1 It is a structural schematic diagram of an evaporation equipment provided by an embodiment of the present invention. Such as figure 1 As shown, the evaporation equipment may include: an evaporation chamber (equipment chamber, EQP chamber) 100, and an evaporation source (source) 200, a mask (mask) 300 and a magnetic mechanism located in the evaporation chamber 100 (magnet) 400. The mask plate 300 and the magnetic mechanism 400 can be arranged in sequence along the emission direction Z1 away from the evaporation source 200 , and the magnetic mechanism 400 can be fixed on the top D1 of the evaporation chamber 100 . Optionally, the mask 300 may be a high-precision metal mask (fine metal mask, FFM).

[0038] Wherein, the...

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Abstract

The application discloses a vacuum evaporation substrate and a vacuum evaporation device. The vacuum evaporation substrate comprises a conductive pattern located on one side of a substrate body, wherein the conductive pattern can be connected with a current source, and generates a magnetic field under action of currents provided by the current source. Due to the fact that the magnetic field can interact with a magnetic field generated by a magnetic mechanism in the vacuum evaporation device so as to enable the magnetic mechanism to generate magnetic force of certain intensity and direction forthe vacuum evaporation substrate, a function of adsorbing or rejecting the vacuum evaporation substrate can be achieved, and furthermore by improving the drooping degree of the middle area of the vacuum evaporation substrate, an open area on a masking plate and an area of a material layer to be formed on the vacuum evaporation substrate can be accurately aligned, and then vacuum evaporation effects are ensured.

Description

technical field [0001] The invention relates to the field of display technology, in particular to an evaporation substrate and evaporation equipment. Background technique [0002] Evaporation process is a process that uses a mask to form a desired material layer on an evaporation substrate by evaporation. [0003] At present, during evaporation, a mask plate can be attached to the side of the evaporation substrate close to the evaporation source. The evaporation source can evaporate the evaporation material on the evaporation substrate through the opening area on the mask, so as to form a required material layer on the evaporation substrate. [0004] However, during the evaporation process, the evaporation substrate may sag due to its own gravity, so that the opening area on the mask plate cannot be accurately aligned with the area on the evaporation substrate where the material layer is to be formed. Contents of the invention [0005] The embodiment of the present inven...

Claims

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Application Information

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IPC IPC(8): C23C14/24C23C14/04
CPCC23C14/042C23C14/24
Inventor 王文涛史大为赵东升王培杨璐段岑鸿徐海峰王子峰
Owner BOE TECH GRP CO LTD
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