Extremely simple floating ground charge-controlled memcapacitor circuit simulation model

Abstract

The invention discloses an extremely simple floating ground charge-controlled memcapacitor circuit simulation model. The extremely simple floating ground charge-controlled memcapacitor circuit simulation model comprises a port a, a port b, a voltage-controlled capacitor UC, a voltage integrator A1, a voltage integrator A2 and a current control voltage source IU, wherein the voltage-controlled capacitor UC comprises a voltage control end uc and a controlled capacitor Cu; the capacitance of the controlled capacitor Cu in the voltage-controlled capacitor UC is controlled by the voltage value of the voltage control end uc; the voltage integrator A1 comprises a voltage input end u and a voltage output end uh; the voltage integrator A2 comprises a voltage input end uh and a voltage output end uc; the current control voltage source IU comprises a current control end i and a voltage source output end ui; and the voltage value of the voltage source output end ui in the current control voltage source IU is controlled by the current value of the current control end i. The electrical characteristics of ports a and b of the floating charge-controlled memcapacitor circuit simulation model are equivalent to the characteristics of ports A and B of a charge control memcapacitor CM, and the complexity and the number of components of an existing load control memcapacitor circuit simulation modelare further reduced only by using existing five components in simulation software, and the memcapacitor circuit simulation model has the advantages of being flexible in memcapacitor value change range, free of grounding limitation, wide in working voltage range and easy to understand. The extremely simple floating ground charge-controlled memcapacitor circuit simulation model can be widely appliedto design and simulation analysis of the memcapacitor circuit.

Description

technical field [0001] The patent of the present invention relates to the field of new circuit element model construction, in particular to a very simple simulation model of a floating charge memcapacitor circuit. Background technique [0002] In 1971, Professor Cai Shaotang, the "father of memristors", theoretically proposed a memristor (memristor) that could describe the relationship between magnetic flux and charge. In 2008, after Hewlett-Packard Labs announced in the journal "Nature" that it had physically realized a two-terminal device with the characteristics of a memristor, new concepts of memcapacitor and meminductor were also proposed one after another. Memcapacitors, memristors, and memristors all have memory functions, showing pinch hysteresis loops with contraction hysteresis characteristics. Unlike memristors, memcapacitors and memristors do not need to consume energy during operation. In low-power VLSI, memcapacitors and memristors have more advantages than me...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an extremely simple simulation model of the floating-ground load-controlled memcapacitor circuit, which solves the problem that the existing memcapacitor circuit simulation model requires one end to be grounded, is not a two-pin model, and the voltage of the two pins cannot exceed the internal voltage of the model. The supply voltage of active devices and the required components are many and the structure is complex

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