Novel resistive random access memory device, memory cell and method for manufacturing memory cell

Abstract

A memory cell includes: a first contact feature partially embedded in a first dielectric layer; a barrier layer, lining the first contact feature, that comprises a first portion disposed between the first contact feature and first dielectric layer, and a second portion disposed above the first dielectric layer; a resistive material layer disposed above the first contact feature, the resistive material layer coupled to the first contact feature through the second portion of the barrier layer; and a second contact feature embedded in a second dielectric layer above the first dielectric layer. The invention also provides a novel resistive random access memory device, and a method for manufacturing the memory cell.

Description

technical field [0001] Embodiments of the present invention generally relate to the technical field of semiconductors, and more particularly, relate to a novel resistive random access memory device, a memory unit and a manufacturing method thereof. Background technique [0002] In recent years, non-traditional volatile memory (VM) devices such as ferroelectric random access memory (FRAM) devices, phase change random access memory (PRAM) devices, and resistive random access memory (RRAM) devices have emerged. ) device. In particular, RRAM devices exhibiting switching behavior between a high-resistance state (HRS) and a low-resistance state (LRS) have various advantages over conventional NVM devices. These advantages include, for example, fabrication steps compatible with current complementary metal-oxide-semiconductor (CMOS) technology, low-cost fabrication, compact structure, flexible scalability, fast switching, high integration, and the like. [0003] Generally, a RRAM d...

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Problems solved by technology

In existing RRAM devices, there are often defects at such interfaces (e.g., at the corners of the contact features) possibly due to, for example, one or more misalignments before, while or after forming the lower electrode. loss of conductive material)

[0004] Therefore, existing RRAM devices and their fabrication methods are not entirely satisfactory

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