A gate-controlled bipolar-field-effect composite silicon carbide ldmos
A composite silicon carbide and field effect technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of reducing the conduction performance of devices and low electron mobility in MOSFET channels.
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[0029] Such as figure 1 As shown, the gate-controlled bipolar-field-effect composite silicon carbide lateral double-diffused metal-oxide-semiconductor transistor includes:
[0030] Silicon carbide substrate 1, the doping concentration is the concentration of general silicon carbide single crystal material, the typical value is 1×10 18 cm -3 ~1×10 19 cm -3 ;
[0031] growing an epitaxial layer on the substrate;
[0032] forming a base region 2 on the epitaxial layer;
[0033] A drift region 6 is formed on the epitaxial layer; the material of the drift region is silicon carbide, and the doping concentration is 1×10 15 cm -3 ;
[0034] Forming an active region on the surface of the device;
[0035] a gate insulating layer formed on the active region, and forming a gate 8 above the gate insulating layer;
[0036] A source region 3 is formed on the base region in contact with a base region contact 4 and a channel is formed on the base region; wherein, the doping concentra...
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